Influence of Technological Parameters of the Atomic-Layer Epitaxy Process on the Uniformity of the Thickness of the Obtained Nucleation Layers GaN

Nikiforov, M. O.; Dedkova, A. A.; Rygalin, B.N.

doi:10.24151/1561-5405-2020-25-3-277-281

PofU.E

2020

DOI: 10.24151/1561-5405-2020-25-3-277-281

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Influence of Technological Parameters of the Atomic-Layer Epitaxy Process on the Uniformity of the Thickness of the Obtained Nucleation Layers GaN

M. O. Nikiforov¹,

A. A. Dedkova²,

B.N. Rygalin³

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Influence of Technological Parameters of the Atomic-Layer Epitaxy Process on the Uniformity of the Thickness of the Obtained Nucleation Layers GaN

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