Influence of surfactants on molecular beam epitaxial grown SiGe single quantum wells studied by photoluminescence and secondary ion mass spectroscopy investigations

Zeindl, H.P.; Nilsson, S.; Klatt, J.; Krüger, D.; Kurps, R.

doi:10.1016/0022-0248(95)00390-8

Cited by 12 publications

(6 citation statements)

References 7 publications

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“…The small and constant value we observe for L C may be due to a higher Ge concentration in the Ga-induced islands, as surfactants have been shown to decrease Si/ Ge intermixing. 20,22,23 The second interesting feature of Ga-mediated island growth is the way the islands change aspect ratio during growth. Figure 5 shows the variation of the height ͑h͒ of Ga-induced Ge islands with their lateral size ͑L͒, measured ex situ by AFM in air.…”

Section: Shape and Size Of Ga-mediated Ge Islandsmentioning

confidence: 99%

“…The formation of dislocations is one suitable pathway for reducing total energy by eliminating part of the strain energy, and this pathway may occur relatively easily in Ga-mediated islands if there is reduced intermixing. 20,22,23 Once a dislocation has formed, an island's energy decreases and it can grow rapidly. 60 Further relaxation can be achieved either by increasing the number of dislocations or by increasing the aspect ratio even further.…”

Section: Shape and Size Of Ga-mediated Ge Islandsmentioning

confidence: 99%

“…18,19 As and Sb can be used to produce relaxed buffer layers with a smoother surface and a lower threading dislocation density. 20,21 Bi and Sb can decrease the surface segregation of Ge during growth 22,23 and As, Bi, and Sb decrease Si/ Ge intermixing 20,22-25 allowing formation of sharp Si/ SiGe interfaces. Bi, As, Sb, and Te can increase the thickness of the Ge wetting layer, 19,22,26,27 and Bi, Ga, Sb, and Te can change the growth mode of Ge from the Stranski-Krastanov to the Frank-van der Merwe mode.…”

Section: Introductionmentioning

confidence: 99%

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Growth kinetics of Ge islands during Ga-surfactant-mediated ultrahigh vacuum chemical vapor deposition on Si(001)

Portavoce¹,

Kammler²,

Hull³

et al. 2004

Phys. Rev. B

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The surfactant effect of Ga pre-deposited prior to ultrahigh vacuum (UHV) chemical vapor deposition (CVD) of Ge on Si(001) is investigated using in situ transmission electron microscopy. Island shape, nucleation and growth kinetics, and the influence of growth temperature and pressure are studied. When 1 monolayer of Ga covers the surface, Ge island nucleation occurs after a 5 -10ϫ longer growth time than without Ga for the same growth temperature and pressure, and the island density then varies with time in a more complex way than for Ga-free growth. The islands formed have a different shape and aspect ratio compared to conventional hut and dome clusters, and the critical lateral size for dislocation nucleation is reduced. Ex situ medium energy ion scattering and x-ray photoelectron scattering measurements of the total amount of Ge deposited before island nucleation demonstrate that the Ga layer decreases the surface reactivity and inhibits Ge growth. We discuss a simple model in which the surfactant-mediated growth kinetics are principally driven by the balance between Ge deposition and Ga desorption. We show that Ga surfactant-mediated UHV CVD can be used to produce Ge quantum dots with a higher surface density and a thinner wetting layer than is possible using conventional CVD.

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Section: Shape and Size Of Ga-mediated Ge Islandsmentioning

confidence: 99%

Section: Shape and Size Of Ga-mediated Ge Islandsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Growth kinetics of Ge islands during Ga-surfactant-mediated ultrahigh vacuum chemical vapor deposition on Si(001)

Portavoce¹,

Kammler²,

Hull³

et al. 2004

Phys. Rev. B

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“…Apart from these theoretical reports, however, there have been no experimental studies that demonstrated the impact of surfactants on wire morphology or growth kinetics. Antimony (Sb) has been used as a surfactant in Si/Si 1−x Ge x heterostructure thin film growth to either facilitate epitaxial growth by altering the growth mode [7] or to improve the interfacial abruptness in heterostructures by suppressing the Ge segregation at interfaces [8]. Ge has a tendency to segregate at the surface since it has a lower surface energy compared to Si.…”

Section: Introductionmentioning

confidence: 99%

Suppression of the vapor–liquid–solid growth of silicon nanowires by antimony addition

et al. 2008

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The effect of Sb addition on the growth rate and structural properties of Si nanowires synthesized by vapor-liquid-solid growth was investigated. The nanowire growth rate was reduced by an order of magnitude following the addition of a low concentration pulse of trimethylantimony (TMSb) to the gas phase during growth. Transmission electron microscopy analysis revealed that the wires had a thick amorphous coating ( approximately 8 nm) around the catalyst particle and a distorted catalyst shape. Energy-dispersive x-ray spectroscopy showed the presence of trace amounts of Sb in the amorphous coating around the catalyst and at the catalyst-wire interface. Antimony was also found to be incorporated in the Si nanowires with a peak in the Sb concentration measured at the initial point where the TMSb pulse was added to the gas stream. The significant reduction in wire growth rate was attributed to Sb segregation at the vapor-liquid and liquid-solid interfaces which results in a change in interfacial energies and a reduction in the rate of Si incorporation at these interfaces.

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“…[1][2][3] Group-V elements ͑e.g., As or Sb and more recently Bi͒ have been used as surfactants to modify the growth mode of Ge epitaxial films on Si͑001͒ for several years. [4][5][6][7][8] During growth, surfactant atoms segregate from the interface to the surface, and the rapid exchange between Ge and surfactant atoms lets the growing species incorporate in a subsurface site rapidly.…”

mentioning

confidence: 99%

Dimer-breaking-assisted exchange mechanism in surfactant-mediated epitaxial growth of Ge on Si(001):Ab initiototal energy calculations

Liu

Wang

2007

Phys. Rev. B

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We report ab initio identification of the exchange pathways in surfactant-mediated growth of Ge on Si͑001͒ surface. Throughout the exchange process, a dimer-breaking-assisted exchange ͑DBAE͒ mechanism is revealed due to the lowering of energy barriers. When one Ge dimer is adsorbed on the surfactant dimer row or in the trough between surfactant dimer rows, the Ge dimer can both exchange one by one with the subsurface surfactant atoms through the DBAE process. The DBAE process together with a rolling-over process of the surface diffusion can lead to the nucleation of Ge under the surfactant layer, giving a fully natural explanation for the experimental observation.

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Influence of surfactants on molecular beam epitaxial grown SiGe single quantum wells studied by photoluminescence and secondary ion mass spectroscopy investigations

Cited by 12 publications

References 7 publications

Growth kinetics of Ge islands during Ga-surfactant-mediated ultrahigh vacuum chemical vapor deposition on Si(001)

Growth kinetics of Ge islands during Ga-surfactant-mediated ultrahigh vacuum chemical vapor deposition on Si(001)

Suppression of the vapor–liquid–solid growth of silicon nanowires by antimony addition

Dimer-breaking-assisted exchange mechanism in surfactant-mediated epitaxial growth of Ge on Si(001):Ab initiototal energy calculations

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