Influence of sulfurization temperature on photovoltaic properties of Ge alloyed Cu2SnS3 (CTGS) thin film solar cells

He, Mingrui; Kim, Jihun; Suryawanshi, Mahesh P.; Lokhande, A.C.; Gang, Myengil; Ghorpade, Uma V.; Lee, Dong-Seon

doi:10.1016/j.solmat.2017.08.008

Cited by 34 publications

(11 citation statements)

References 23 publications

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“…The certified highest power conversion efficiencies (PCE) of 12.6%, 12.5% and 11.0% have been achieved by using CZTSSe, CZTSe, CZTS absorber, respectively [1][2][3]14]. Note that the PCE of kesterite so far dominates all emerging inorganic thin-film PV technologies, highlighting its potential for cost-effective solar cell applications [15][16][17][18][19][20][21][22]. Nevertheless, the present record PCE of CZTSSe is still lower than the physical limit defined by the Shockley-Queisser (S-Q) theory or first-principles calculations [23][24][25].…”

mentioning

confidence: 99%

Interface engineering of p-n heterojunction for kesterite photovoltaics: A progress review

Sun

Suryawanshi

et al. 2021

Journal of Energy Chemistry

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mentioning

confidence: 99%

Interface engineering of p-n heterojunction for kesterite photovoltaics: A progress review

Sun

Suryawanshi

et al. 2021

Journal of Energy Chemistry

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“…The reported bandgap of Cu 2 SnS 3 tetragonal phase was in range (1.35 -1.8 eV) and triclinic phase in range (0.9-1.35 eV) while Cu 4 SnS 4 orthorhombic phase is in range (1.05-1.25 eV) [5]. Herein, the optical bandgaps for sulfurized CTS NPs were estimated as before by straight line tting of linear part in (αhν) 2 plot as a function of the photon energy hν as shown in Fig. 7.…”

Section: Optical Propertiesmentioning

confidence: 99%

“…CTS is a ternary semiconductor material belongs to group I-IV-VI series that has similar optoelectronic properties to CZTS and high potential for photovoltaic applications. CTS is characterized by p-type conductivity with high absorption coe cient (>10 4 cm -1 ) as well as excellent bandgap (0.9 -1.77 eV) but consists of less elements than CZTS [1][2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%

Effect of Sulfur Precursors on Crystallographic, Optical, and Electrical Properties of Cu2SnS3 Nanoparticles

Abdel-Latif

Rezk

Abdel-Moniem

et al. 2021

Preprint

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In this study, the synthesis of Cu2SnS3 (CTS) nanoparticles by solvothermal method using different sulfur precursors is reported. The influence of sulfur precursors on the structure, optical and electrical properties of prepared CTS material is investigated. The sulfur precursor sources have showed a noticeable effect on crystallite size, secondary phases, and resulted CTS nanoparticles structure. Among the four sulfur precursor sources used in this study, thiourea is the only sulfur source that produces CTS with a cubic structure and without the need for thermal treatment. Whereas after sulfurization at 580 ºC, all the four samples attained CTS nanoparticles with diverse properties. Changing the sulfur precursors have clear effects on crystallite size and optical bandgap prepared samples as they ranged from 11.21 to 21.23 nm and from 1.4 to 1.7 eV, respectively. Additionally, Hall effect measurement revealed that all CTS samples are p-type semiconductors with bulk carrier concentrations in 1018 order, which is suitable for various optoelectronic applications such as photovoltaics and photodetectors.

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“…The addition of Ge to CTS led to an increase in E g from 0.93 to 1.02 eV, and resulted in improving the performance of the solar cells; in particular, the open‐circuit‐voltage ( V OC ) of the Ge containing CTS was 100 mV higher than that of CTS without Ge. He et al and Hamamura et al obtained PCE values of 2.14 and 3.77% for the cells featuring the Ge/(Sn + Ge) ratios of 0.110 and 0.027, respectively.…”

Section: Introductionmentioning

confidence: 96%

Preparation of (Cu,Ag)₂SnS₃ Thin‐Film Solar Cells by Sulfurizing Metal Precursors Featuring Various Ag Contents

Nakamura

Eang

Yamaguchi

et al. 2019

Physica Status Solidi (a)

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To enlarge the bandgap of Cu2SnS3 (CTS), Ag‐incorporating CTS thin films are successfully deposited by sulfurizing Ag‐Cu‐Sn precursors featuring various Ag contents and the constant Cu/Sn ratio of 1.75, which is the optimal value for CTS thin‐film solar cells. To control the Ag content of the films, the thickness of the Ag layers of the precursors is varied from 0 to 200 nm, which corresponds to the Ag/(Ag + Cu) ratio of the films varying from 0 to 0.32. The films featuring Ag/(Ag + Cu) ratios smaller than 0.16 are solid solutions of CTS and Ag2SnS3, that is, (Cu,Ag)2SnS3 (CATS), while the film featuring the Ag/(Ag + Cu) ratio of 0.32 appears to be a mixture of CATS and Ag‐Sn‐S related crystals, such as Ag8SnS6. The grain size and bandgap increase as the Ag/(Ag + Cu) ratio increases up to 0.16. The highest power conversion efficiency (PCE) of 3.6% is obtained for the cell featuring the Ag/(Ag + Cu) ratio of 0.08. The highest open cell voltage (VOC) for the CATS thin‐film solar cells is obtained to be 0.284 mV. However, the improvement in PCE is attributed to the increase in the short‐circuit current density and fill factor of the cell rather than the increase in VOC.

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Influence of sulfurization temperature on photovoltaic properties of Ge alloyed Cu2SnS3 (CTGS) thin film solar cells

Cited by 34 publications

References 23 publications

Interface engineering of p-n heterojunction for kesterite photovoltaics: A progress review

Interface engineering of p-n heterojunction for kesterite photovoltaics: A progress review

Effect of Sulfur Precursors on Crystallographic, Optical, and Electrical Properties of Cu2SnS3 Nanoparticles

Preparation of (Cu,Ag)₂SnS₃ Thin‐Film Solar Cells by Sulfurizing Metal Precursors Featuring Various Ag Contents

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Influence of sulfurization temperature on photovoltaic properties of Ge alloyed Cu2SnS3 (CTGS) thin film solar cells

Cited by 34 publications

References 23 publications

Interface engineering of p-n heterojunction for kesterite photovoltaics: A progress review

Interface engineering of p-n heterojunction for kesterite photovoltaics: A progress review

Effect of Sulfur Precursors on Crystallographic, Optical, and Electrical Properties of Cu2SnS3 Nanoparticles

Preparation of (Cu,Ag)2SnS3 Thin‐Film Solar Cells by Sulfurizing Metal Precursors Featuring Various Ag Contents

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Preparation of (Cu,Ag)₂SnS₃ Thin‐Film Solar Cells by Sulfurizing Metal Precursors Featuring Various Ag Contents