Influence of substrate temperature on structural, morphological, optical and electrical properties of Bi-doped MnInS 4 thin films prepared by nebuliser spray pyrolysis technique

A review on metal-doped chalcogenide films and their effect on various optoelectronic properties for different applications

“…This could be attributed to the improvement in the crystallinity of the material films. 56 The photoluminescence technique plays an essential role in extensive research on thin films' energy levels. For the Sb 2 S 3 /Bi bilayer film, the PL spectra showed a strong emission at 335 nm, attributed to the photon-assisted transitions and the recombination of the electronic hole after relaxation (band edge emission).…”

Effect of Metal (Cu, Mn) Doping on the Structural, Morphological, Optical, Photoluminescence, Electrical and Photocatalytic Properties of In2s3 Nanoparticles

“…The dislocation density is one of the crystallographic defects that determine the properties of the material. The dislocation density ( δ ) is calculated using the following formula [34]…”

Influence of Precursor Temperature on Bi Doped ZnSe Material via Electrochemical Deposition Technique for Photovoltaic Application

“…The band gap tunability of ZnSe makes its optical properties outstanding and it can be used as transparent conductive oxide thin films. Many methods, both chemical and physical, including sputtering [10], thermal evaporation [11], electro-deposition [12,20,21], spray pyrolysis [13] and chemical vapour deposition [14] have been used to produce doped and undoped semiconductor thin films. So far, some of the methods have drawbacks such as toxic reducing agents, and organic solvents, or may require special conditions such as high temperature or low pressure, and sometimes can require costly and time consuming procedure.…”

“…Among them, the electrochemical deposition of thin films is a viable alternative to vacuum-based deposition process. Its major advantages are that processing can take place at room temperatures and pressures and thin film properties can be controlled [4,10]. Generally speaking, adding an appropriate amount of dopant can change the physical properties of a semiconductor film.…”

“…have been systematically studied. The semi-metal element bismuth (Bi) is used as a suitable doping material for electronic applications because of its high anisotropic electrical properties and high electron mobility [10,19], which is rarely reported in published works. Bidoped ZnSe thin film has a transparent nature, and its band gap nature results to potential support for heterojunction layers in solar cells.…”