Influence of Substrate Temperature on the Formation of Titanium Carbide Film

Kaipoldayev, O. E.; Baigarinova, G. A.; Nemkayeva, Renata R.; Гусейнов, Н. Р.; Mukhametkarimov, Ye. S.; Tauasarov, K.; Prikhodko, O. Yu.

doi:10.21272/jnep.11(4).04003

Cited by 3 publications

(5 citation statements)

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“…The Williamson-Hull curve confirms these errors, resulting in a relative deformation of the network . by Thermionic Vacuum Arc (TVA) Technology It can be observed that in the case of samples A5 and A7 with the same thickness of Ti layers (20nm) the increaase of the substrate temperature from room temperature (sample A5) to 300°C (sample A7) causes a passage from predominant hexagonal Ti phase (sample A5) to a cubic TiC and hexagonal Ti mixture of phases (sample A7) This observation is in agreement with reference [6] were is studied the effect of synthesis condition on the formation of the TiC phase on Si substrate by DC magnetron ion-plasma sputtering of combined graphite/titanium target. The authors show that increase of temperature allows to synthesized films with stoichiometry that coincid with that of TiC.…”

Section: Tem Measurementssupporting

confidence: 86%

“…In reference [6] is studied the effect of synthesis conditions on the formation of titanium carbide phase on silicon surfaces by DC magnetron ion-plasma sputtering of combined graphite/titanium target. The X-ray diffraction analysis and Raman spectroscopy showed that the structure of titanuium carbide films depend on the substrate temperature.…”

Section: Introductionmentioning

confidence: 99%

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NANOSTRUCTURED Ti-C THIN FILMS DEPOSITED BY THERMIONIC VACUUM ARC (TVA) TECHNOLOGY

CIUPINA¹,

Vladoiu²,

Lungu³

et al. 2022

AnnalsARSciPhysChem

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Nanostructured titanium-carbon nanostructured thin films were prepared using the Thermionic Vacuum Arc (TVA) technology in different configurations under a varied number of Ti/C combinations at high base pressure of 1 x 10-6Torr with and without graded compositions. The layers consisting of about lOOnm Carbon base layer and seven 40nm alternatively Ti and C layers were deposited on Silicon substrates. On the other hand, in order to obtain C-Ti multilayer structures with variable thickness and different percentages in C and Ti oflayers, a 20nm thick C layer was first deposed on Si substrate and then seven Ti-C layers, each ofthese having thickness of up to 40nm were deposed. To perform the successively layers with various thickness were changed the discharge parameters for C and Ti plasma sources to obtain the desirable thickness. By changing ofsubstrate temperature between room temperature and 300°C and on the other hand the bias voltage up to -700V, different batches of samples were obtained for this study. The films were characterized by surface morphology, and microstructure, through Rutherford Backscattering Spectrometry (RBS), Raman Spectroscopy, Transmission Electron Microscopy (TEM), Grazing Incidence X-ray diffraction (GIXRD). Tribological and electrical measurements are also presented.

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Section: Tem Measurementssupporting

confidence: 86%

Section: Introductionmentioning

confidence: 99%

NANOSTRUCTURED Ti-C THIN FILMS DEPOSITED BY THERMIONIC VACUUM ARC (TVA) TECHNOLOGY

CIUPINA¹,

Vladoiu²,

Lungu³

et al. 2022

AnnalsARSciPhysChem

View full text Add to dashboard Cite

show abstract

“…It can be observed that in the case of samples A5 and A7 with the same thickness of Ti layers (20 nm) the increase of the substrate temperature from room temperature (sample A5) to 300 °C (sample A7) causes a passage from predominant hexagonal Ti phase (sample A5) to a cubic TiC and hexagonal Ti mixture of phases (sample A7) This observation is in agreement with [3] were is studied the effect of synthesis condition on the formation of the TiC phase on Si substrate by DC magnetron ion-plasma sputtering of combined graphite/ titanium target. The authors show that increase of temperature allows to synthesized films with stoichiometry that coincide with that of TiC.…”

Section: Tem Measurementssupporting

confidence: 83%

“…According to [16] in the case of graphite crystallites = Å. We mention the fact that according to [3] the decrease of graphite crystallite sizes as result of increase of the deposition temperature is correlated with increase of TiC crystallite size with increase of deposition temperature. We consider that the decrease of ratio I I D G from 1.450 in the case of sample A3 to 1.220 in the case of sample A4 is due to increase of crystallite sizes caused by −700 V bias potential applied on the sample A4.…”

Section: Raman Measurementsmentioning

confidence: 92%

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Carbon–titanium nanostructures: synthesis and characterization

Ciupină¹,

Lungu²,

Vladoiu³

et al. 2020

Phys. Scr.

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C–Ti multilayer nanostructures were deposed by thermionic vacuum arc technology. The layers consisting of about 100 nm Carbon base layer and seven 40 nm alternatively Ti and C layers were deposed on Silicon substrates. On the other hand, in order to obtain C–Ti multilayer structures with variable thickness and different percentages in C and Ti of layers, a 20 nm thick C layer was first deposed on Si substrate and then seven Ti–C layers, each of these having thickness of up to 40 nm were deposed. To perform the successively layers with various thickness were changed the discharge parameters for C and Ti plasma sources to obtain the desirable thickness. By changing of substrate temperature between room temperature and 300 °C and on the other hand the bias voltage up to −700 V, different batches of samples were obtained for this study. To characterize properties of as prepared C–Ti multilayer structures were used electron microscopy techniques (TEM, STEM), Raman spectroscopy, RBS techniques and tribological measurements. To characterize the electrical conductive properties, the electrical surface resistance versus temperature have been measured, and then the electrical conductivity. Using the Wiedemann–Frantz law was calculated the thermal conductivity.

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Synthesis and characterization of some C-Ti based multilayer and composite nanostructures

Ciupina¹,

Lungu²,

Vladoiu³

et al. 2022

JOR

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Carbon-Titanium multilayer and composite thin films were obtained by Thermionic Vacuum Arc (TVA) method. The nanostructured films consisted by a carbon base layer and seven alternatively Titanium and Carbon layers were deposed on Silicon substrate. As well, to give C-Ti multilayer films with different percentages in Ti and C of layers, a thick Carbon base layer was deposed on Si substrate, and then seven Ti-C layers. In order to achieve the successively layers with C, and Ti different percentages, were adjusted the discharge parameters of C and Ti plasma sources to obtain the desired composition of layers. By changing of substrate temperature, and on the other hand the bias potential up to –700V, different batches of samples were obtained. Characterization of structural properties of films was achieved by Grazing Incidence X-ray Diffraction (GIXRD) and Electron Microscopy technique (TEM). The measurements show that increase of the substrate temperature reveal the changes in TixCy lattice parameters. The tribological measurements were performed using a ball-on-disk system with normal forces of 0.5, 1, 2, 3N respectively and a Bruker Hystrion TI 980 TriboIndenter. Was found that the coefficient of friction depends on the synthesis temperature, bias voltage and also by the C content, Ti content and amount of TiC nanocrystallites. To characterize the electrical conductive properties, the electrical surface resistance versus temperature have been measured, and then the electrical conductivity is calculated. Using the Wiedeman-Frantz law was obtained the thermal conductivity.

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Influence of Substrate Temperature on the Formation of Titanium Carbide Film

Cited by 3 publications

References 0 publications

NANOSTRUCTURED Ti-C THIN FILMS DEPOSITED BY THERMIONIC VACUUM ARC (TVA) TECHNOLOGY

NANOSTRUCTURED Ti-C THIN FILMS DEPOSITED BY THERMIONIC VACUUM ARC (TVA) TECHNOLOGY

Carbon–titanium nanostructures: synthesis and characterization

Synthesis and characterization of some C-Ti based multilayer and composite nanostructures

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