2007
DOI: 10.1016/j.apsusc.2007.03.020
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Influence of substrate temperature on the optical and piezoelectric properties of ZnO thin films deposited by rf magnetron sputtering

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Cited by 71 publications
(31 citation statements)
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“…It can be seen that in the whole measured energy range the fitted data conform to the experimental data very well, indicating that CauchyUrbach model fitting in spectroscopic ellipsometer measurement was reliable and optical properties of the films were described at high precision. It's well known that refractive index depend on the density of films [29]. When the films deposited at higher oxygen partial pressure, the collision probability of oxygen atoms and deposited atoms increase, which induce the decrease of the migration energy of deposited atoms, leading to the loose arrangement of the deposited films.…”
Section: Resultsmentioning
confidence: 99%
“…It can be seen that in the whole measured energy range the fitted data conform to the experimental data very well, indicating that CauchyUrbach model fitting in spectroscopic ellipsometer measurement was reliable and optical properties of the films were described at high precision. It's well known that refractive index depend on the density of films [29]. When the films deposited at higher oxygen partial pressure, the collision probability of oxygen atoms and deposited atoms increase, which induce the decrease of the migration energy of deposited atoms, leading to the loose arrangement of the deposited films.…”
Section: Resultsmentioning
confidence: 99%
“…On the other hand, few studies report the piezoresistive characteristics of ZnO. This may be attributed to the following reasons: (a) the piezoelectric properties of ZnO are well documented in the literature [4][5][6] ; (b) compared to SiC 7 and diamond, ZnO exhibits lower electromechanical properties.…”
Section: Introductionmentioning
confidence: 94%
“…[1][2][3][4][5][6][7][8][9] The electrical conductivity of ZnO is controlled by intrinsic defects such as oxygen vacancies and/or zinc interstitials, which act as ntype donors. When doped with group III elements such as indium, boron, gallium and aluminum the electrical resistivity decrease.…”
Section: Introductionmentioning
confidence: 99%