Abstract:Graphene is grown directly on c-, a-, m-, and r-plane sapphire substrates by chemical vapor deposition, and their structures and electrical properties are compared. The obtained graphene is always polycrystalline, but the grain size is dependent on the sapphire surface orientation. The largest and smallest grains respectively appear on the m- and c-planes, and the graphene grown on the a- and r-planes has intermediate grain sizes. The carrier mobility is the largest for the graphene grown on the m-plane, indic… Show more
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