Influence of substrate on structural, morphological and optical properties of ZnO films grown by SILAR method

Abstract

ZnO films were obtained by successive ionic layer adsorption and reaction (SILAR) method from four different substrates: glass microslides, corning glass, quartz and silicon with and without oxide layer. For films deposition, a precursor solution of ZnSO4 was used, complexed with ammonium hydroxide. Prior to the film deposition, wettability of the substrates was analysed using a CCD camera. It was found that the Si without the oxide layer substrate shows hydrophobic behaviour, which makes the films less adherent and not uniform, while in the other substrates, the behaviour was optimal for the growing process. ZnO films grown on glass microslides, corning glass, quartz and Si with oxide layer were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV-Vis techniques. According to the XRD patterns, the films were polycrystalline, with hexagonal wurtzite structure and the patterns mentioned showed significant differences in crystallite sizes, microstrain and texture coefficient with respect to the employed substrates. The morphology of the ZnO films constituted by rice-like and flower-like structures shows differences in form and size depending on the substrate. The UV-Vis spectroscopy results show that the substrate did not influence the band gap energy value obtained from films.Fil: Jiménez García, F. N.. Universidad Autónoma de Manizales; ColombiaFil: Londoño Calderon, Cesar Leandro. Universidad Autónoma de Manizales; Colombia. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Espinosa Arbeláez, D. G.. Universidad Nacional Autónoma de México; MéxicoFil: Del Real, A.. Universidad Nacional Autónoma de México; MéxicoFil: Rodríguez García, M. E.. Universidad Nacional Autónoma de México; Méxic

Effect of growth time on Ti-doped ZnO nanorods prepared by low-temperature chemical bath deposition

“…Zinc oxide (ZnO) has gained a particular interest among other metal semiconductor oxides due to its outstanding and unique properties including its direct-wide band gap (3.37 eV), large binding energy (60 eV) at room temperature [1] , low-cost material [2] , nontoxic and chemically-inert material [3] . ZnO was employed in various fields like light-emitting diodes, UV-photo-detectors, solar cells, gas sensors, pH sensors, and nano-lasers [4] , [5] .…”

A study of the Zn:Sn mixing ratio effect on the gas detector properties

“…In contrast, sensor with mixed oxides Zn 2 SnO 4 and ZnSnO 3 ) exhibits un increase of response to reach the maximum value of 20.8% at the 1000 pm concentration of LPG gas for them. Fig.22 shows the response time as a function of gas concentration, it can be seen that the time diminish by increased gas concentration [26,27]. And it is higher for pure oxide and fewer for mixed oxides.…”

“…It can be observed that sensors of ZnO and SnO 2 show relatively low response at the same operating temperature in the range from (10 -1000) ppm, with the maximum response of 71.5% and 80.61% for ZnO and SnO 2 , at 1000 ppm respectively. Will sensor with mixed oxides (Zn 2 SnO 4 , ZnSnO 3 ) exhibits un increase of response to reach the maximum value of 89.57% at the 1000 pm concentration of H 2 S gas for them [25,26]. Fig.18 shows the Response time as a function of gas concentration, it can be seen that the time diminish by increased gas concentration.…”

Bath Temperature Effect on c-axis Preferred Orientations and Band Gap of Semiconductor ZnO Thin Films

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