Influence of substrate misorientation and temperature on MBE-grown Si

Zeindl, H.P.; Fuenzalida, V.M.; Messarosch, J.; Eisele, I.; Oppolzer, H.; Huber, V.

doi:10.1016/0022-0248(87)90397-6

Cited by 16 publications

(5 citation statements)

References 3 publications

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“…Iron silicide NCs were formed by SPE of 0.4 nm Fe at 630 °C, as these growth conditions are suitable for β-FeSi2 NCs formation [13]. Covering silicon layer was deposited over the NCs at a temperature of 750 °C since this temperature is high enough to grow single-crystal Si film on Si(111) surface [14]. To study the effect of annealing on uncovered NCs sample B with as-grown NCs was subjected to an additional annealing at 750 °C.…”

Section: Methodsmentioning

confidence: 99%

Phase composition evolution of iron silicide nanocrystals in the course of embedding into monocrystalline silicon

Chusovitin¹,

Dmitry²,

Dotsenko³

et al. 2017

Proc. Asia-Pacific Conf. On Semiconducting Silicides and Related Materials 2016

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Phase composition of iron silicide nanocrystals (NCs) in the course of formation by solid phase epitaxy (SPE) method, and embedding into silicon was studied. It was found that SPE of 0.4-nm-thick Fe film at 630 °C resulted in formation of small (less than 29.5 nm) and big (more than 42.6 nm) NCs. The former contained only β-FeSi2 phase and the latter consisted of β-FeSi2 and ɛ-FeSi phases. Annealing of these NCs at 750 °C for 90 min led to transformation of β-FeSi2 and ɛ-FeSi into α-FeSi2 NCs. However, when the as-grown NCs have been covered with silicon layer with thickness of 25 -380 nm at 750 °C, they turned into β-FeSi2 NC. Epitaxial relationship and crystal lattice deformation obtained for β-FeSi2 NCs covered by Si layer is favorable for indirect to direct band gap transition.

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Section: Methodsmentioning

confidence: 99%

Phase composition evolution of iron silicide nanocrystals in the course of embedding into monocrystalline silicon

Chusovitin¹,

Dmitry²,

Dotsenko³

et al. 2017

Proc. Asia-Pacific Conf. On Semiconducting Silicides and Related Materials 2016

View full text Add to dashboard Cite

show abstract

“…Covering silicon layer was deposited over the NCs at a temperature of 750 °C since this temperature is high enough to grow single-crystal Si film on Si(111) surface [14]. To study the effect of annealing on uncovered NCs sample B with as-grown NCs was subjected to an additional annealing at 750 °C.…”

Section: Methodsmentioning

confidence: 99%

Phase composition evolution of iron silicide nanocrystals in the course of embedding into monocrystalline silicon

et al. 2017

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“…The 310 'C growth temperature represents a reduction of 350 'C in the temperature at which thick, high-quality homoepitaxial Si (I 1) films may be grown on bare surfaces. 7 As with other overlayer elements, the Pb layer segregates from the growing crystal to stay at the surface. Without Pb, epitaxial growth at these temperatures breaks down within a few nanometers of the substrate-film interface, resulting in an amorphous film.…”

Section: Introductionmentioning

confidence: 99%

Low-Temperature Si (111) Homoepitaxy and Doping Mediated by a Monolayer of Pb

et al. 1999

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The codeposition of Pb during Si (111) molecular beam homoepitaxy leads to high-quality crystalline films at temperatures for which films deposited on bare Si (111) are amorphous. Like other growth mediating elements--commonly called surfactants--Pb segregates to the film surface. Ion channeling and transmission electron microscopy reveal nearly defect-free epitaxy for a Pb coverage of one monolayer and temperatures as low as 310 'C. We have deposited films up to 1000 A in thickness with no indication that this is an upper limit for high-quality epitaxy. However, a decrease in the Pb coverage during growth by only one tenth of a monolayer leads to highly defective films at these temperatures. The codeposition of both As and Pb results in a striking enhancement of the film quality as well. In this case, while the Pb again segregates to the film surface, the As is incorporated into the film with no apparent segregation. Lead-mediated Si epitaxy on As-terminated Si (11) produces high-quality films in which the As remains buried at the substrate-film interface. These results show Pb-mediated Si (11l) homoepitaxy to be a promising strategy for the synthesis of layered structures having abrupt nanoscale dopant profiles.

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Influence of substrate misorientation and temperature on MBE-grown Si

Cited by 16 publications

References 3 publications

Phase composition evolution of iron silicide nanocrystals in the course of embedding into monocrystalline silicon

Phase composition evolution of iron silicide nanocrystals in the course of embedding into monocrystalline silicon

Phase composition evolution of iron silicide nanocrystals in the course of embedding into monocrystalline silicon

Low-Temperature Si (111) Homoepitaxy and Doping Mediated by a Monolayer of Pb

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