2018
DOI: 10.1016/j.jallcom.2017.09.335
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Influence of substitution of Al-O for Si-N on improvement of photoluminescence properties and thermal stability of Ba2Si5N8:Eu2+ red emitting phosphors

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Cited by 45 publications
(14 citation statements)
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“…Recently, aluminum nitride (AlN), boron nitride (BN), and gallium nitride (GaN) have been studied extensively because of their wide band gaps, high efficiency, and excellent chemical stability. In particular, these materials doped with rare-earth (RE) ions have excellent luminescence properties suitable for solid-state lighting due to their wide band gaps; hence, they have attracted great interest in recent years. The continued fascination with RE-doped wide-band gap materials is partly due to the discovery that thermal quenching of the emission decreases as the band gap of the host material increases. Because the doping activator ions of metal nitrides or oxynitrides have good visible light emission and low luminescence heat quenching, they are often used as color conversion phosphors for white light-emitting diodes (wLEDs) …”
Section: Introductionmentioning
confidence: 99%
“…Recently, aluminum nitride (AlN), boron nitride (BN), and gallium nitride (GaN) have been studied extensively because of their wide band gaps, high efficiency, and excellent chemical stability. In particular, these materials doped with rare-earth (RE) ions have excellent luminescence properties suitable for solid-state lighting due to their wide band gaps; hence, they have attracted great interest in recent years. The continued fascination with RE-doped wide-band gap materials is partly due to the discovery that thermal quenching of the emission decreases as the band gap of the host material increases. Because the doping activator ions of metal nitrides or oxynitrides have good visible light emission and low luminescence heat quenching, they are often used as color conversion phosphors for white light-emitting diodes (wLEDs) …”
Section: Introductionmentioning
confidence: 99%
“…The main benefit of this mechanism is a simple coating which led a low‐cost product. However, the emission spectrum of this combination suffers from the deficiency of the red color component which doesn't provide the desire quality color of white‐LED 10,11 . More specifically the generated white light with the mention combination provides poor color quality due to high correlated color temperature (CCT >7000 K) and lower color rendering index (CRI <80) 12,13 .…”
Section: Introductionmentioning
confidence: 99%
“…It is worth noting that the red‐emitting phosphors are the main desire for both the way of phosphors converted white – LEDs 11,17,18 . In the first method it is used to improve the value of CRI and CCT by enhancing the red spectral region in the emission spectrum of YAG: Ce 3+ coated on blue‐emitting InGaN chip 19‐21 .…”
Section: Introductionmentioning
confidence: 99%
“…One of the ways of overcoming the problem consists in adjusting the crystal field environment around Eu 2+ activator, the 5d levels of which are sensitive to crystal field in a single-host phosphor [8][9][10]. Nevertheless, up to now, the results obtained in this way allowed just quite little shift and broadening of Eu 2+ 5d-4f emission band.…”
Section: Introductionmentioning
confidence: 99%