1998
DOI: 10.1016/s0925-9635(97)00285-9
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Influence of structural and morphological properties on the “intrinsic” field emission of CVD diamond films

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Cited by 15 publications
(4 citation statements)
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“…9. While the structural properties of the diamond films as deduced by Raman spectroscopy did not systematically affect the FE properties, a significant correlation between E on and the morphology was observed.…”
Section: Influence Of Fabrication Parametersmentioning
confidence: 77%
“…9. While the structural properties of the diamond films as deduced by Raman spectroscopy did not systematically affect the FE properties, a significant correlation between E on and the morphology was observed.…”
Section: Influence Of Fabrication Parametersmentioning
confidence: 77%
“…Therefore, field emission ͑FE͒ properties of diamond, [1][2][3] amorphous carbon 4 films, carbon nanostructures, 5 and many related materials have been investigated. Therefore, field emission ͑FE͒ properties of diamond, [1][2][3] amorphous carbon 4 films, carbon nanostructures, 5 and many related materials have been investigated.…”
Section: Introductionmentioning
confidence: 99%
“…[1][2][3][4][5][6] However, despite the intense interest in field emission ͑FE͒ from CVD-grown diamond films and other carbon materials, 7,8 the mechanism of this phenomenon is still not clear. In particular, the emission is extremely spatially nonuniform, with some regions emitting and others not.…”
mentioning
confidence: 99%
“…[6][7][8] However, CITS ͓or current-voltage (I -V)͔ measurements are at best an indirect characterization of FE. Separation-voltage (S -V) spectroscopy can be used to provide a direct measure of FE, [1][2][3][4][5] where S is the tip displacement ͑not absolute tip-sample distance͒ required to maintain constant emission current for varying tip-sample voltage V. The reciprocal of the slope of the S -V plot provides so-called ''turn-on'' field for electron emission, i.e., the electric field necessary to induce the emission of the set current. The S -V method of FE measurement is superior to the CITS or I -V techniques commonly used [6][7][8] because ͑i͒ for S -V measurements the current density remains constant, whereas for I -V measurements the current density increases dramatically and the probability of modifying the surface during the measurement becomes high and ͑ii͒ the turn-on field can be determined from the slope of the S -V curve and does not depend on a knowledge of the ab-solute tip-sample distance which is not usually known to any accuracy.…”
mentioning
confidence: 99%