Influence of stress induced CT local layout effect (LLE) on 14nm FinFET

Zhao, Pei; Pandey, Shesh Mani; Banghart, Edmund; He, Xiaoli; Asra, Ram; Mahajan, Vinayak; Zhang, Haojun; Zhu, B.; Yamada, Kazuhiko; Cao, Linjun; Balasubramaniam, P.; Joshi, Manoj; Eller, M.; Bénistant, F.; Samavedam, Srikanth

doi:10.23919/vlsit.2017.7998182

Cited by 7 publications

(1 citation statement)

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“…W.Guo et al [76] presents an experimental work on the impact of mechanical stress on the fully depleted bulk Fin-FET. Peo et al [77] has discussed the stress-induced local new effect (LNE) due to various CT layout designs in 14nm FinFET devices to observe the device performance.…”

Section: Non-ideal Effects On Finfetmentioning

confidence: 99%

FinFET to GAA MBCFET: A Review and Insights

Das,

Rajalekshmi,

James

2024

IEEE Access

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This review article presents a journey from Fin-shaped field effect transistor (FinFET) to gate-all-around multi-bridge channel field effect transistor (GAA MBCFET) technology, unraveling the evolution of semiconductor architectures. This article provides a concise yet insightful overview of the development of FinFET, exploring modified architectures, current trends, and associated constraints. The growing importance of other semiconductor materials instead of Si in FinFET or other technologies has been studied in detail. The article explores an emerging technology called 'GAA MBCFET', highlighting its advantages over FinFET. It also delves into the notable drawbacks and complex fabrication challenges associated with the upcoming GAA MBCFET technology. INDEX TERMS Gate-All-Around (GAA), Multi-Bridge Channel (MBC), Silicon on Insulator (SOI)

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Section: Non-ideal Effects On Finfetmentioning

confidence: 99%