Influence of stress and unidirectional field annealing on structural and magnetic performance of PtMn bottom spin-filter spin valves

Öksüzoğlu, Ramis Mustafa; Schug, C.; York, Brian

doi:10.1016/j.jmmm.2004.03.026

Cited by 9 publications

(13 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…L1 0 -Mn 50 Pt 50 is an AF material and has been attracted much attention for EB system due to high Neel temperature (T N = 975 K), large K AF of 1.4 × 10 7 erg/cm 3 , good thermal stability, and especially excellent corrosion resistance. [3][4][5][6][7][8][9][10][11][12][13][14][15] However, the structure of Mn 50 Pt 50 films deposited at room temperature (RT) is paramagnetic disordered face-centered-cubic (FCC) structure and no exchange coupling at interface is induced. In order to form AF ordering and build up strong exchange coupling effect to adjacent FM layers, a thermal process of post annealing and cooling in external magnetic field to RT is essential to form highly ordered L1 0 phase and good AF alignment.…”

Section: Introductionmentioning

confidence: 99%

Comparison on the structure and exchange bias in Co/MnPt and MnPt/Co polycrystalline films on glass substrates

et al. 2019

View full text Add to dashboard Cite

Structure and magnetic properties of sputter-prepared Co(5 nm)/MnPt(20 nm) and MnPt/Co polycrystalline films with various annealing temperatures (T) have been compared. XRD and TEM analysis show that MnPt is more compressive in film plane for Co/MnPt than MnPt/Co at as-deposited state. Large H E of 464-560 Oe are attained in two series films through proper thermal process of post annealing and cooling in external magnetic field. The increase of H E with T is mainly dominated by the ordering degree of MnPt layer and the roughness of the interface. As compared to MnPt/Co film (T = 250 ○ C), Co/MnPt film with more compressive in film plane exhibits L1 0-ordering, the onset of stress release, and the optimized H E at lower T = 200 ○ C. Higher H E for MnPt/Co film at T = 250 ○ C (560 Oe) than Co/MnPt film T = 200 ○ C (464 Oe) might be related to grain growth for L1 0 phase. Nevertheless, higher annealing temperature leads to the interdiffusion, the roughened surface and therefore the decrease of H E and Hc. This study provides useful information to fabricate exchange-bias system with L1 0-MnPt as an antiferromagnetic layer.

show abstract

Section: Introductionmentioning

confidence: 99%

Comparison on the structure and exchange bias in Co/MnPt and MnPt/Co polycrystalline films on glass substrates

et al. 2019

View full text Add to dashboard Cite

show abstract

“…Due to wide variety of EB types and materials, besides the role of the anisotropy or interface structure [4], optimum AF film thickness and grain size dependence of the EB field (H ex ) and their correlation to the /1 1 1S texture for a given application are still important controversial questions [5]. Depending on the position of AF layer on top or bottom of F layers, EB systems are called top or bottom type [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

“…Consequently, the choice of ULs for the deposition of AF layer becomes crucial. Accordingly, different materials for AF layer as PtMn [3,8], FeMn [7,10,20,21], IrMn [4][5][6]9,[11][12][13][14][15][16][17][18][19]22,24,25] and different ULs [3][4][5][6][7][8][11][12][13][14][15][16][17][18]21,22] deposited using DC and RF magnetron sputtering (DC-MS, RF-MS) and ion beam sputtering [20] were established. In top EB systems, ULs as Ta/NiFe [6], Ta, Cu or Si [7,13,17,20], Cu, Ru or Cu/ Ru [4,5,15] provides the /1 1 1S texture in AF layer, in bottom type EB systems it was induced by Ta/AuCu [3]<...>…”

Section: Introductionmentioning

confidence: 99%

Effect of Ta buffer and NiFe seed layers on pulsed-DC magnetron sputtered Ir20Mn80/Co90Fe10 exchange bias

Öksüzoğlu¹,

Yıldırım²,

Çınar³

et al. 2011

Journal of Magnetism and Magnetic Materials

View full text Add to dashboard Cite

“…Consequently, the influences of temperature, time and external magnetic field on postdeposition annealing have been extensively investigated in the last decade (e.g. [5][6][7]).…”

Section: Introductionmentioning

confidence: 99%

“…In our previous study, the process conditions and their influence on the sensor performance were investigated using a so-called stress annealing (SA) subsequent to the unidirectional annealing (UDA) treatment [7]. The SA treatment simulates the annealing steps after UDA and can be considered as a final outgoing quality test of the sensor's thermal stability.…”

Section: Introductionmentioning

confidence: 99%

Microstructure and interface evolution of PtMn bottom spin-filter spin valves induced by stress and unidirectional field annealing

Öksüzoğlu¹,

MacLaren²,

Schug³

et al. 2005

J. Phys.: Condens. Matter

Self Cite

View full text Add to dashboard Cite

The microstructure evolution in PtMn-based bottom spin-filter spin valves was investigated to clarify the alteration of the sensor performance caused by different annealing treatments during manufacturing. Neither unidirectional field annealing (UDA) nor stress annealing (SA) for 38 h, which simulates the final quality test of the finished read-write head, have any significant influence on the texture of the sensor stack. UDA causes the appearance of domain boundaries in the PtMn layer as a consequence of the fcc–fct transformation together with some disturbance in the functional layers of the sensor, neither of which affect the giant magneto-resistive performance. The SA treatment causes an inter-diffusion in the NiFeCr/NiFe seed layers, some grain growth in PtMn, more serious disturbance of the functional layers, and complete amorphization of the Ta cap layer. In comparison to other studies of spin valves, the intermixing of seed layers in the present study does not appear to influence the PtMn/CoFe interface. The alteration of the sensor performance seems to be mainly caused by the inter-diffusion of the functional layers.

show abstract

Influence of stress and unidirectional field annealing on structural and magnetic performance of PtMn bottom spin-filter spin valves

Cited by 9 publications

References 11 publications

Comparison on the structure and exchange bias in Co/MnPt and MnPt/Co polycrystalline films on glass substrates

Comparison on the structure and exchange bias in Co/MnPt and MnPt/Co polycrystalline films on glass substrates

Effect of Ta buffer and NiFe seed layers on pulsed-DC magnetron sputtered Ir20Mn80/Co90Fe10 exchange bias

Microstructure and interface evolution of PtMn bottom spin-filter spin valves induced by stress and unidirectional field annealing

Contact Info

Product

Resources

About