Influence of Source Stack and Heterogeneous Gate Dielectric on Band to Band Tunneling Rate of Tunnel FET

Karbalaei, Mohammad; Dideban, Daryoosh

doi:10.1007/s12633-019-00272-9

Cited by 4 publications

(1 citation statement)

References 32 publications

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“…As a result, the effective dimension of the tunneling zone shrinks and consequently the electron Band to Band Tunneling (BTBT) rate increases. 25 In turn, this increases the driving current of the device. Thus there is a rise in Ion/Ioff ratio.…”

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confidence: 99%

Sensitivity Analysis of a Double Source Stack Lateral TFET-Based Gas Sensor

Mili,

Liana,

Bhowmick

2024

ECS J. Solid State Sci. Technol.

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Metal oxide semiconductor gas sensors are used in various roles and sectors compared to other sensing technology due to their durability, longevity, and sensing capability. The current work proposes a dual-stacked heterogeneous source lateral n-type tunnel field-effect transistor (DSHS-nTFET) for gas sensing applications. In the device’s tunneling junction, the presence of source stack boosts the electric field, reduces tunneling width, and then enhances the band-to-band tunneling. Catalytic metals used as gate contacts for this double source stacking TFET design are explored for the purpose of detecting specific gases. Platinum (Pt), Cobalt (Co), Palladium (Pd), and Silver (Ag) are the metal gate electrodes utilised to sense the target gases, like Carbon-monoxide (CO), Ammonia (NH3), Hydrogen (H2), and Oxygen (O2), respectively. With the aid of the Sentaurus TCAD simulator, the suggested structure has been examined for a number of electrical parameters including electric field, surface potential, drain current, and numerous sensing characteristics pertaining to adsorption of gas molecules. The sensitivity and reliability of the proposed sensor have also beeninvestigated with respect to temperature fluctuations, and it has been shown that the device is largely stable over the 200–400 K range.

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confidence: 99%