Influence of solvothermal synthesis conditions in BiSI nanostructures for application in ionizing radiation detectors

Solution Growth of BiSI Nanorod Arrays on a Tungsten Substrate for Solar Cell Application

“…Particularly, as one of the representative bismuth chalcohalides, a BiSI semiconductor possesses many interesting physical properties, such as photoelectrics, ferroelectrics, piezoelectrics, electro-optics, electromechanics, optics, and magnetics . Owing to its excellent semiconducting behavior and suitable band gap, BiSI has been extensively investigated for applications in photovoltaics, , photoconductivity, , photocatalysis, and radiation detection. , Until recent years, the photovoltaic applications of BiSI have been actively pursued despite the fact that its photovoltaic effect was noticed as early as in 1965 . In 2012, Hahn et al fabricated BiSI thin films on a fluorine-doped tin oxide (FTO)-coated glass substrate by a spray pyrolysis deposition method, and utilized them as photovoltaic absorber materials. , Later, Kunioku et al developed a low-temperature synthesis of BiSI particles with a high-incident photon-to-current conversion efficiency (IPCE) by phase transition from BiOI .…”

“…So far, a number of techniques have been employed for preparation of BiSI, such as the Bridgman–Stockbarger technique, vapor–phase growth, spray pyrolysis, flux reaction, gel process, mechanochemical route, and hydrothermal , and solvothermal methods. ,− Mostly, the synthesized BiSI crystals had a 1D morphology. However, to the best of our knowledge, 1D nanostructure arrays of BiSI have never been reported.…”

“…49 Owing to its excellent semiconducting behavior and suitable band gap, BiSI has been extensively investigated for applications in photovoltaics, 50,51 photoconductivity, 52,53 photocatalysis, 54 and radiation detection. 55,56 Until recent years, the photovoltaic applications of BiSI have been actively pursued despite the fact that its photovoltaic effect was noticed as early as in 1965. 57 In 2012, Hahn et al fabricated BiSI thin films on a fluorine-doped tin oxide (FTO)-coated glass substrate by a spray pyrolysis deposition method, and utilized them as photovoltaic absorber materials.…”

Recent Advances in Ferroelectric Nanosensors: Toward Sensitive Detection of Gas, Mechanothermal Signals, and Radiation

“…One of the new interesting prospective applications of nanosized ferroelectrics is their use in ionizing radiation detectors. Recently [97], Aguiar et al have synthesized bismuth sulfoiodide (BiSI) nanostructures via the solvothermal method. BiSI is a ferroelectric semiconductor with the indirect energy band gap of 1.57 eV [98] that belongs to a group of ternary chalcohalide materials.…”

“…Such prepared device was used for detection of X and gamma ray radiation of 241 Am. The BiSI-based detector exhibited a signal-to-noise relation of 1.4 for an exposure rate of 3.5 mR•h −1[97]. However, in the case of radiation doses of 0.4 mR•h −1 and 14 mR•h −1 , no noticeable response and a behavior corresponding to saturation conditions were observed, respectively.…”