Influence of Solvent on the Properties of CZTS Nanoparticles

Kannan, A.; Manjulavalli, T.E.; Chandrasekaran, J.

doi:10.1016/j.proeng.2015.08.1112

Cited by 67 publications

(18 citation statements)

References 33 publications

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“…Similar Ohmic behavior for I-V characterization has been reported for CZTS thin films by other research groups [39][40][41][42][43]. The sheet resistance ( R s ) for the CZTS film coating can be calculated from the slope (S) of the I-V curves using Eq.…”

Section: Current-voltage (I-v) Characteristicssupporting

confidence: 60%

Facile Ultrasound-Assisted Synthesis of Copper Zinc Tin Sulfide Chalcogenide Nanoparticles for Thin Film Solar Cell Applications

Paraye

Manivannan

Selvam

2020

Period. Polytech. Chem. Eng.

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Single-step ultrasound-assisted synthesis of Copper Zinc Tin Sulfide nanoparticles (CZTS) has been studied at two different frequencies. While the effects of frequency on the particle size of the CZTS nanoparticles were insignificant, a noticeable change was observed in composition. As-obtained particles presented the amorphous nature and spherical morphology with a high degree of agglomeration. Annealing of the synthesized CZTS nanoparticles increased the crystallinity while the sulfur content decreased considerably. The poly-dispersity and agglomeration of the nanoparticles increased upon annealing. The as-obtained CZTS nanoparticles synthesized at 45 kHz frequency presented a copper deprived and zinc-rich composition suitable for higher photo-conversion efficiency of the solar cells. The bandgap of the annealed and non-annealed particles ranged between 1.25 eV and 1.65 eV.

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Section: Current-voltage (I-v) Characteristicssupporting

confidence: 60%

Facile Ultrasound-Assisted Synthesis of Copper Zinc Tin Sulfide Chalcogenide Nanoparticles for Thin Film Solar Cell Applications

Paraye

Manivannan

Selvam

2020

Period. Polytech. Chem. Eng.

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“…CZTS peaks fall at 288, 330 and 360 cm −1 , respectively [22]. The stronger peak at 330 cm −1 is due to the A 1 symmetry and it is related to the vibration of the S atoms in CZTS [23,24]. Peaks at 288 cm −1 are attributed to the vibration of the Zn atoms and S atoms with some contribution from the Cu atoms in CZTS lattice [24].…”

Section: Resultsmentioning

confidence: 99%

“…The stronger peak at 330 cm −1 is due to the A 1 symmetry and it is related to the vibration of the S atoms in CZTS [23,24]. Peaks at 288 cm −1 are attributed to the vibration of the Zn atoms and S atoms with some contribution from the Cu atoms in CZTS lattice [24]. The secondary phase Cu 2 S, observed in the XRD pattern (Figure 2) is not observed in the Raman spectra, a feature made evident by the absence of peaks at 475 cm −1 [25].…”

Section: Resultsmentioning

confidence: 99%

Synthesis and Post-Annealing of Cu2ZnSnS4 Absorber Layers Based on Oleylamine/1-dodecanethiol

et al. 2019

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Cu2ZnSnS4 (CZTS) nanocrystals in oleylamine (OLA) and 1-dodecanethiol (1-DDT) solvents were successfully prepared via hot-injection method, to produce inks for the deposition of absorber layers in photovoltaic cells. In this process, 1-DDT acts as a coordinating ligand to control the nucleation and growth of CZTS nanocrystals, whereas lower amounts of OLA promote a homogeneous growth of the grains in the absorber layer. X-Ray Diffraction (XRD) revealed both tetragonal and hexagonal phases of CTZS in films obtained after soft thermal treatments (labeled TT0). In particular, 1-DDT is responsible for the formation of a greater percentage of the hexagonal phase (ZnS-wurtzite type) than that formed when only OLA is used. The thermal treatments have been varied from 500 °C to 600 °C for improving crystallization and eliminating secondary phases. Both features are known to promote CZTS thin films with band gap values typical of CZTS (1.5–1.6 eV) and suitable resistivity. This study let to compare also the CZTS post-annealing without (TT1) and with sulfur vapor (TT2) in a tubular furnace. Only tetragonal CZTS phase is observed in the XRD pattern of CZTS thin films after TT2. A small presence of localized residues of secondary phases on the same samples was revealed by μRaman measurements. The best values of band gap (1.50 eV) and resistivity (1.05 ohm.cm) were obtained after thermal treatment at 500 °C, which is suitable for absorber layer in photovoltaic application.

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“…The highest efficiencies achieved in CZTS solar cell are still far below those reported for CdTe and CIGS technology. Up to date, the reported CZTS solar cell efficiencies are lower than 10% [15], because the control of secondary phases formation in CZTS represents a critical issue to obtain high efficiency devices [16]. However, the conversion efficiencies of ZnO-CZTS cells have exceeded 5% but are still lower than those of the best CdS-CZTS cells [17].…”

Section: Introductionmentioning

confidence: 99%

Thin-Film FTO-ZnO-CZTS Solar Cells Fully Deposited by Spray Pyrolysis

Cissé¹

2019

AJMSP

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Thin films of ZnO, CZTS (Cu 2 ZnSnS 4) and ZnO-CZTS were prepared by spray pyrolysis deposition (SPD). After spraying a precursor solution of ZnO directly onto fluorine-doped tin oxide (FTO) substrats, CZTS thin layers were sprayed onto layers of ZnO to forme a p-n junction. Some CZTS layers were directly spray onto fluorine-doped tin oxide substrats. ZnO is a wide band gap n-type material, consisting of abundant and nontoxic elements, and is thus expected to be a good substitute for CdS buffer layer in solar cells. In this paper, we report the study of CZTS and ZnO thin films synthesized by chemical spray pyrolysis (CSP) method. During the deposition of the ZnO thin films on the FTO substrats the number of sequences was varied from 20 to 40. The influence of the ZnO on the structural, optical, morphological and electrical properties of CZTS films was studied using various techniques. The X-ray diffraction studies showed the formation of kesterite (Cu 2 ZnSnS 4) phases with the peaks corresponding to (112), (220) and (312) planes. SEM study revealed a lack of uniformity of the surface of the CZTS layers sprayed onto the ZnO layers for a lower thickness of ZnO (FTO-ZnO20-CZTS). The band gap values of FTO-CZTS and FTO-ZnO-CZTS thin films were measured and found in the range 2.2-2.25 eV which are in good agreement with the results reported (2-2.2 eV). The morphological studies revealed the formation of some clusters randomly distributed on the film surface in the ZnO-containing layers, i.e. the FTO-ZnO20-CZTS and Finally, current-voltage measurements for different PV cells with maximum efficiency were carried out. A conversion efficiency (η) of 5.99% with fill factor (FF) = 18.8%, open circuit voltage (Voc) = 0.54 V, short circuit current density (Jsc) = 59 mA.cm2 were recorded through the FTO-ZnO40-CZTS thin film PV cell.

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Influence of Solvent on the Properties of CZTS Nanoparticles

Cited by 67 publications

References 33 publications

Facile Ultrasound-Assisted Synthesis of Copper Zinc Tin Sulfide Chalcogenide Nanoparticles for Thin Film Solar Cell Applications

Facile Ultrasound-Assisted Synthesis of Copper Zinc Tin Sulfide Chalcogenide Nanoparticles for Thin Film Solar Cell Applications

Synthesis and Post-Annealing of Cu2ZnSnS4 Absorber Layers Based on Oleylamine/1-dodecanethiol

Thin-Film FTO-ZnO-CZTS Solar Cells Fully Deposited by Spray Pyrolysis

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