2009
DOI: 10.1016/j.physe.2009.08.018
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Influence of Sn-doping in hydrothermal methods on the optical property of the ZnO nanorods

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Cited by 35 publications
(17 citation statements)
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“…Since Sn act as donor in CuO, the carrier concentration will increase upon Sn doping which leads to band tail creation due to excessive donors. Such increase in band gap energy is previously reported for Ge and Sn doped ZnO nanostructures at higher doping levels [27,28].…”
Section: Hν N B Hν Egsupporting
confidence: 82%
“…Since Sn act as donor in CuO, the carrier concentration will increase upon Sn doping which leads to band tail creation due to excessive donors. Such increase in band gap energy is previously reported for Ge and Sn doped ZnO nanostructures at higher doping levels [27,28].…”
Section: Hν N B Hν Egsupporting
confidence: 82%
“…The transmittance at 2 at.% Sn-doped ZnO thin film exhibited 96% average transparency, which was higher than that of the undoped and 1 at.% Sn-doped ZnO thin film. The high transmittance of thin film can be due to its small surface roughness, thereby suppressing the growth of ZnO Sn dopants and forming flat and fine surfaces [18]. Moreover, the obtained results are comparable with those obtained by Tsay et al [24] and Pan et al [26].…”
Section: Resultssupporting
confidence: 86%
“…Yang et al [18] reported the influence of Sn-doping on ZnO nanorod prepared by hydrothermal method in aqueous solution using zinc nitrate as precursor; however, ZnO nanorods grown on Sn-doped ZnO as seed layers and applied in DSSCs are rarely reported. Moreover, Sn materials, which are originally from group IV elements, exhibit advantages because of their two more extra electrons that can be substituted into ZnO, thereby contributing to double charge carriers.…”
Section: Advances In Materials Science and Engineeringmentioning
confidence: 99%
“…While in the visible region, it produces an optical transparency with a vast exciton binding energy of 60 meV. Nevertheless, ZnO is an n-type II-VI semiconductor and oxygen vacancies, zinc interstitials or complex defects are identified as principal donor centers [1,2]. Due to the fundamental properties ZnO possessed, it becomes an attractive material for various application such include extensive panel application in optoelectronics like photodetector [3], light emitting diodes (LED), and laser devices [4].…”
Section: Introductionmentioning
confidence: 99%