Influence of SiO2 additional layers on the laser induced damage threshold of Ta2O5 films

Investigation of annealing effects on the laser-induced damage threshold of amorphous Ta2O5 films

“…This is the reason of wavelength shift of Ta 2 O 5 films during annealing. Moreover, the increase of the density is beneficial for the adhesive force and heat dissipation, which may also contribute to a slight increase in the LIDT [32,33]. The increase of RMS roughness and scattering during annealing is attributed to the agglomeration of particles in films.…”

High temperature annealing effect on structure, optical property and laser-induced damage threshold of Ta2O5 films

“…The mechanism of laser-induced damage has not been fully understood as it is complex and associated with many factors such as deposition methods and conditions, post-treatment, coating designs and laser characteristics [6][7][8][9]. For the nanosecond laser pulse, the damage of films has always been induced by defects, and the LIDT can be improved by decreasing the density or enhancing the mechanical stability of defects [10,11].…”

The ablation of Ta2O5 film by pulsed nanosecond Gaussian laser beams

“…The parameters of Ta 2 O 5 were shown as following: the refractive index 2.16 for the wavelength 1064 nm, the melting point 2073 K, the specific heat 15 cal/(K mol), the thermal conductivity 2.6 × 10 -4 and density 8.2 g/cm 3 [14,15] As can be seen in figure 4 (a), the change of film surface temperature can be divided into two stages with respect to the pulse time: rising and falling. Temperature rises quickly in the course of laser pulse reaches the highest value at the end of the laser pulse.…”