Influence of sintering temperature on microstructure and electrical properties of Er2O3 added ZnO-V2O5-MnO2-Nb2O5 varistor ceramics

Roy, Samarpita; Das, Debdulal; Roy, Tufan

doi:10.1016/j.jallcom.2018.03.302

Cited by 35 publications

(28 citation statements)

References 38 publications

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“…Normally, there are two distinct regions in the J−E curves of the varistor ceramics, namely, prebreakdown region and postbreakdown region, respectively. 49 As shown in Figure 6a, no obvious change of the current density along with the applied electric field can be observed in the prebreakdown region, whereas it exhibits a sharp increase in the postbreakdown region. The J−E nonlinear curves of composite ceramic samples with x = 0.10−0.30 substantially move to higher voltages compared with the x = 0.05 composite ceramic sample, indicating a greatly enhanced E b value.…”

Section: Resultsmentioning

confidence: 86%

“…In the nonlinear J – E characteristic curves, the E b and α values as a function of STO content x for (1– x )CCTO– x STO composite ceramic samples at RT are depicted in Figure . Normally, there are two distinct regions in the J – E curves of the varistor ceramics, namely, prebreakdown region and postbreakdown region, respectively . As shown in Figure a, no obvious change of the current density along with the applied electric field can be observed in the prebreakdown region, whereas it exhibits a sharp increase in the postbreakdown region.…”

Section: Results and Discussionmentioning

confidence: 95%

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Excellent Capacitor–Varistor Properties in Lead-Free CaCu₃Ti₄O₁₂–SrTiO₃ System with a Wrinkle Structure via Interface Engineering

Mao

Wang

et al. 2020

ACS Appl. Mater. Interfaces

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Lead-free perovskite CaCu 3 Ti 4 O 12 (CCTO) dielectrics are extremely important candidates for capacitor−varistor dual-function materials. However, their overall success in applications is somewhat controlled by the longstanding issues such as relatively large dielectric loss and insufficiently high electric breakdown field. Herein, we report the success in the preparation of an optimized lead-free (1−x)CaCu 3 Ti 4 O 12 −xSrTiO 3 (CCTO− STO) composite system with improved dielectric and nonlinear properties via interface engineering. Interestingly, looking closer at the grain boundaries using transmission electron microscopy, it is found that an obvious interface region with a transition layer of a wrinkled structure is formed between the CCTO matrix phase and STO dopant phase. Significantly, all the composite ceramic samples present high permittivity in the order of about 10 3 to 10 4 , and the 0.9CCTO−0.1STO composite ceramic sample exhibits a lower dielectric loss of about 0.068 at room temperature and at 1 kHz. Excitingly, the optimized 0.9CCTO−0.1STO composite ceramic sample also exhibits a remarkably elevated breakdown field strength of about 14.03 kV/cm and a large nonlinear coefficient of about 16.11. The improvement in nonlinear properties with a high breakdown field strength and large nonlinear coefficient could be attributed to the interfacial effect in the composite structure, originating from the formation of the transition layer with a wrinkle structure at the interface between CCTO and STO phases. Such effects can result in great electrical heterogeneity caused by the higher resistance of the grain boundary and the enhanced potential barrier at the interface region. The new insights on the formation of the interfacial wrinkle structure near the phase boundaries of the CCTO−STO composite system and their effects on improvement of electrical properties can stimulate future research on lead-free CCTO−STO-based systems toward capacitor−varistor dual-function applications and may offer an effective way to design other lead-free dielectric materials as well.

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Section: Resultsmentioning

confidence: 86%

Section: Results and Discussionmentioning

confidence: 95%

Excellent Capacitor–Varistor Properties in Lead-Free CaCu₃Ti₄O₁₂–SrTiO₃ System with a Wrinkle Structure via Interface Engineering

Mao

Wang

et al. 2020

ACS Appl. Mater. Interfaces

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“…Generally, the sintering process, especially the cooling process, is acknowledged to play important roles in the formation of DSBs at GBs [9,[12][13][14]. Electrical properties of ZnO based varistor ceramics are largely dependent on the sintering temperature, atmosphere and cooling rates, which are further correlated with grain size distribution and height of DSBs at GBS.…”

Section: Introductionmentioning

confidence: 99%

Evolution of Intrinsic and Extrinsic Electron Traps at Grain Boundary during Sintering ZnO Based Varistor Ceramics

Xie¹,

Wang

2022

Materials

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In this paper, evolution of microstructures, electrical properties and defects of the double Schottky barrier during the sintering process were investigated by quenching ZnO varistor ceramics at different sintering stages. It was found that morphology of the samples changed little when the temperature was below 800 °C. Remarkable enhancement of the Schottky barrier height and electrical properties took place in the temperature range between 600 °C and 800 °C. The Bi-rich intergranular layer changed from β phase to α phase. The interfacial relaxation at depletion/intergranular layers became detectable in the samples. Meanwhile, a distinct relaxation loss peak from electron trapping of interface states was observed instead of two dispersed ones. It indicated that the differences among the Schottky barriers in ZnO varistor ceramics became smaller with the process of sintering, which was also supported by the admittance spectra. In addition, oxygen vacancy was found more sensitive to the sintering process than zinc interstitial. The results could provide guidance for fine manipulating the Schottky barrier and its underlying defect structures by optimizing sintering process.

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“…A varistor is a semiconducting ceramic device that protects the electrical and electronic devices from overvoltage transients. Varistor based ZnO has been used to protect electrical circuits because of its excellent nonlinear current voltage properties [1] as well as the nonlinear coefficient, (α) [2]. The value of α shows how quickly the shift from the high resistive to the low resistive state allows the remaining current to flow through the ground.…”

Section: Introductionmentioning

confidence: 99%

Tailoring the structural and optical properties of zinc oxide with addition of bismuth oxide prepared by two step process

SANUSI¹,

Mohamed²,

AHMAD³

et al. 2022

J Met Mater Miner

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This study was done to investigate the impact of bismuth oxide (Bi2O3) composites on the zinc oxide (ZnO) properties for varistor applications. ZnO-Bi2O3 samples were prepared using a two-step process, precipitation, and solid-state method. Bi2O3 was added into ZnO at various concentrations (0, 0.5, 1.0 and 1.5 mol%). All samples were characterized using X-ray diffraction (XRD), Scanning electron microscope (SEM) and UV visible spectroscopy. XRD results have shown that the crystallite size of ZnO-Bi2O3 samples became smaller when Bi2O3 was added from 0.5 mol% to 1.0 mol%. However, the crystallite size of ZnO-Bi2O3 increased over 1.0 mol% of Bi2O3 concentration. The smallest particle and grain size of ZnO-Bi2O3 appeared when composite at 1.0 mol% concentration of Bi2O3. The homogeneity and smallest grain size might be suitable to be used for varistor application. The absorbance of ZnO-Bi2O3 decreased as the Bi2O3 concentration increased. Therefore, adding Bi2O3 at various concentrations into the ZnO host material can tailor its structural and optical properties.

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Influence of sintering temperature on microstructure and electrical properties of Er2O3 added ZnO-V2O5-MnO2-Nb2O5 varistor ceramics

Cited by 35 publications

References 38 publications

Excellent Capacitor–Varistor Properties in Lead-Free CaCu₃Ti₄O₁₂–SrTiO₃ System with a Wrinkle Structure via Interface Engineering

Excellent Capacitor–Varistor Properties in Lead-Free CaCu₃Ti₄O₁₂–SrTiO₃ System with a Wrinkle Structure via Interface Engineering

Evolution of Intrinsic and Extrinsic Electron Traps at Grain Boundary during Sintering ZnO Based Varistor Ceramics

Tailoring the structural and optical properties of zinc oxide with addition of bismuth oxide prepared by two step process

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Influence of sintering temperature on microstructure and electrical properties of Er2O3 added ZnO-V2O5-MnO2-Nb2O5 varistor ceramics

Cited by 35 publications

References 38 publications

Excellent Capacitor–Varistor Properties in Lead-Free CaCu3Ti4O12–SrTiO3 System with a Wrinkle Structure via Interface Engineering

Excellent Capacitor–Varistor Properties in Lead-Free CaCu3Ti4O12–SrTiO3 System with a Wrinkle Structure via Interface Engineering

Evolution of Intrinsic and Extrinsic Electron Traps at Grain Boundary during Sintering ZnO Based Varistor Ceramics

Tailoring the structural and optical properties of zinc oxide with addition of bismuth oxide prepared by two step process

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Excellent Capacitor–Varistor Properties in Lead-Free CaCu₃Ti₄O₁₂–SrTiO₃ System with a Wrinkle Structure via Interface Engineering

Excellent Capacitor–Varistor Properties in Lead-Free CaCu₃Ti₄O₁₂–SrTiO₃ System with a Wrinkle Structure via Interface Engineering