2021
DOI: 10.1007/s10854-020-05198-2
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Influence of silver doping on physical properties of sprayed In2S3 films for solar cells application

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Cited by 18 publications
(13 citation statements)
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“…Crystallization leads to higher recombination of the electron–hole pair that has improved the intensity of PL. 91 Similarly, the photoluminescence properties of Ag doped Zn x Cd 1− x S quantum dot thin films were strongly influenced by Ag doping content, sintering temperature, and time. The PL peak changes from 559 nm to 572 nm with an increase in Ag content from 0.1% to 0.5%.…”
Section: Various Metal Doping In Chalcogenide Materialsmentioning
confidence: 99%
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“…Crystallization leads to higher recombination of the electron–hole pair that has improved the intensity of PL. 91 Similarly, the photoluminescence properties of Ag doped Zn x Cd 1− x S quantum dot thin films were strongly influenced by Ag doping content, sintering temperature, and time. The PL peak changes from 559 nm to 572 nm with an increase in Ag content from 0.1% to 0.5%.…”
Section: Various Metal Doping In Chalcogenide Materialsmentioning
confidence: 99%
“…Due to the ionic character, the introduction of Ag results in different structural alterations in the materials, which in turn modies the band structure and hence the electrical properties of the material. [76][77][78][79][80][81][82][83][84][85][86][87][88][89][90][91][92] For example, the increase in Ag concentration doping in the Ge-S system (x ¼ 57.1 at%) enhances the conductivity of the order of 22 times of the doping concentration (x ¼ 30 at%) Ag in the same system. 76 This enhancement of conductivity is due to the ionic character of Ag + ions.…”
Section: Silver Doped Chalcogenide Thin Lmsmentioning
confidence: 99%
“…In the second and third temperature ranges, (R-II) and (R-III), the obtained activation energies are E a2 = 1836 meV and E a3 = 1014 meV, respectively. The activation energy of the undoped sample (In 2 S 3 ) obtained by the dc conductance vs. temperature plot for the temperature ranges R-I and R-II, is 999 meV [47]. This result is almost 300 meV higher or more than 800 meV lower than for the case of the In 2 S 3 :Ag sample, in the ranges R-I and R-II, respectively.…”
Section: Electrical Propertiesmentioning
confidence: 75%
“…For both dc and ac measurements, the conductance increases with the temperature, confirming the semiconductor behavior of the material, in the 460°C ≤ T ≤ 600 • C temperature and 1 kHz ≤ f ≤ 2 MHz frequency ranges. The dc conductance of the undoped sample (In 2 S 3 ) was measured previously [47]. The behavior is also conductive, but the dc conductance is lower, particularly for temperatures above 480 K, where it can be around one order of magnitude lower.…”
Section: Electrical Propertiesmentioning
confidence: 87%
“…[64][65][66][67] In addition, both SPH and VRH models were used to investigate the electrical response of thin lm materials. 68,69…”
Section: Equivalent Circuitmentioning
confidence: 99%