Abstract:The influence of silicon doping on optically pumped AlGaN quantum well (QW) lasers has been analyzed. Either the QWs, quantum barriers, or the whole heterostructure were doped with Si concentrations between 6×10 16 and 1×10 19 cm −3 . When the QWs are doped up to 5×10 17 cm −3 , laser threshold is reduced and internal quantum efficiency is increased most probably due to a reduction of group-III-vacancies during growth. Higher Si concentrations in the wells can increase the density of group-III-vacancies … Show more
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