Influence of shot noise on CDU with DUV, EUV, and E-beam

Pan, Z; Chen, Chun-Kuang; Gau, Tsai‐Sheng; Lin, Burn J.

doi:10.1117/12.776776

Cited by 11 publications

(10 citation statements)

References 6 publications

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“…From the perspective of quantum physics, the amount of exposure dose in photo resist is the accumulation of discrete photons. If the number of photons decreases, the CD variation range caused by the natural statistical fluctuation becomes more severe [16]. As PSM transfers more informative photons onto wafer than BIM as shown in Figure 4, PSM has a potential to have improved local CDU compared to BIM.…”

Section: Uniformity (Cdu)mentioning

confidence: 98%

Stochastic resist patterning simulation using attenuated PSM for EUV lithography

Hong

Jeong

Lee

et al. 2013

Extreme Ultraviolet (EUV) Lithography IV

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In EUV Lithography, mask shadowing effect and photon shot noise effect are the main sources of patterning limit, critical dimension (CD) non-uniformity and low imaging properties. In this paper, the patterning performance of a 6% attenuated phase shift mask (PSM) is valuated, and the results show that this can be used for half-pitch (hp) down to 14 nm with 0.33NA due to the improved stochastic patterning properties. The proposed PSM consists of 26.5 nm of TaN as an absorber layer and 14 nm of Mo as a phase shifter on 2.5 nm thick Ru capped Mo/Si multilayers. This structure has ~6% reflectivity at the absorber stack and 180° phase shift. The improved stochastic resist patterning properties of PSM were compared with those of conventional binary intensity mask (BIM) with a 70 nm-thick TaN absorber for the 14 ~ 22 nm line and space (L/S) 1:1 dense pattern with 0.33NA off-axis illumination conditions with a EUV generic resist model.

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Section: Uniformity (Cdu)mentioning

confidence: 98%

Stochastic resist patterning simulation using attenuated PSM for EUV lithography

Hong

Jeong

Lee

et al. 2013

Extreme Ultraviolet (EUV) Lithography IV

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“…As device dimensions continue to shrink with EUV lithography, stochastic noise is getting more and more serious such that lots of works [7][8][9][10][11][12][13] about LCDU and/or LWR have been presented in order to model and/or mitigate their impact on device performance. The basis of many of the LWR/LCDU models [9,[11][12][13] is to translate the dose fluctuation to edge placement variation based on quantum statistics. However, different definitions of effective area element finally lead to model variants of different forms.…”

Section: Derivation Of Lcdu Model For Euv Contact Holesmentioning

confidence: 99%

“…Based on the threshold resist model, for a feature exposed at a given focal plane, the correlation between the exposure dose and the aerial image intensity threshold can be described by the following formula [9,11]:…”

Section: Derivation Of Lcdu Model For Euv Contact Holesmentioning

confidence: 99%

A study of patterning 36nm-pitch logic contact holes in a metal oxide resist using a high-reflectance phase-shifting mask that results in image reversal

Tseng¹,

Chen²,

Nam³

et al. 2022

Photomask Technology 2022

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High-reflectance phase-shifting mask (HR-PSM) is studied for patterning 36nm-pitch logic contact holes and compared with other mask absorbers in terms of imaging performance (ILS, LCDU, MEEF, etc.) and exposure dose. To this end, wafer-data-calibrated EUV resist models for CAR and MOR are used. Our simulation results show that a HR-PSM produces dark-field images at large mask CD. However, as mask CD decreases, the tone of the images is reversed and bright-field images of good contrast can be generated. Based on this observation, a HR-PSM plus MOR patterning approach is proposed for through-pitch logic contact hole applications with a minimum pitch equal to 36 nm. We show that this approach demonstrates multiple enhancements in terms of through-pitch performance and enables us to extend the practical resolution of logic contact holes below the pitch of 40 nm using the 0.33NA EUV scanner.

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“…The performance of EUV photoresist is mainly characterized by three parameters: sensitivity, resolution, and line-edge roughness (LER). There is a tradeoff relationship among these parameters, which is mainly caused by the photon shot-noise effect and additionally aggravated by chemical stochastic issues, thus necessitating the development of ingenious strategies to overcome these limitations to achieve high-performance EUV [ 2 – 14 ].…”

Section: Introductionmentioning

confidence: 99%

Near-field infrared nanoscopic study of EUV- and e-beam-exposed hydrogen silsesquioxane photoresist

et al. 2022

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This article presents a technique of scattering-type scanning near-field optical microscopy (s-SNOM) based on scanning probe microscopy as a nanoscale-resolution chemical visualization technique of the structural changes in photoresist thin films. Chemical investigations were conducted in the nanometer regime by highly concentrated near-field infrared on the sharp apex of the metal-coated atomic force microscopy (AFM) tip. When s-SNOM was applied along with Fourier transform infrared spectroscopy to characterize the extreme UV- and electron-beam (e-beam)-exposed hydrogen silsesquioxane films, line and space patterns of half-pitch 100, 200, 300, and 500 nm could be successfully visualized prior to pattern development in the chemical solutions. The linewidth and line edge roughness values of the exposed domains obtained by s-SNOM were comparable to those extracted from the AFM and scanning electron microscopy images after development. The chemical analysis capabilities provided by s-SNOM provide new analytical opportunities that are not possible with traditional e-beam-based photoresist measurement, thus allowing information to be obtained without interference from non-photoreaction processes such as wet development.

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Influence of shot noise on CDU with DUV, EUV, and E-beam

Cited by 11 publications

References 6 publications

Stochastic resist patterning simulation using attenuated PSM for EUV lithography

Stochastic resist patterning simulation using attenuated PSM for EUV lithography

A study of patterning 36nm-pitch logic contact holes in a metal oxide resist using a high-reflectance phase-shifting mask that results in image reversal

Near-field infrared nanoscopic study of EUV- and e-beam-exposed hydrogen silsesquioxane photoresist

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