2021
DOI: 10.1021/acsnano.1c01337
|View full text |Cite
|
Sign up to set email alerts
|

Influence of Shape Anisotropy on the Emission of Low-Dimensional Semiconductors

Abstract: The emergence of precise and scalable synthetic methods for producing anisotropic semiconductor nanostructures provides opportunities to tune the photophysical properties of these particles beyond their band gaps, and to incorporate them into higher-order structures with macroscopic anisotropic responses to electric and optical fields. This perspective article discusses some of these opportunities in the context of colloidal semiconductor nanoplatelets, with a focus on the influence of confinement anisotropy o… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4

Citation Types

0
4
0

Year Published

2022
2022
2024
2024

Publication Types

Select...
5
1

Relationship

0
6

Authors

Journals

citations
Cited by 6 publications
(4 citation statements)
references
References 136 publications
(281 reference statements)
0
4
0
Order By: Relevance
“…4 Therefore, factors like charge carrier mobility and rate of charge transfer and recombination can impact the catalytic efficiency of the material. Additionally, the preparation of semiconductor nanoparticles in the quantum confinement regime (<5.6 nm diameter for CdS) results in further differentiation depending on the size, 10,11 shape, 12 and surface ligation. 11,13 It is common in semiconductors with polytypism to observe a difference in the photocatalytic activity depending on their structure.…”
Section: ■ Introductionmentioning
confidence: 99%
“…4 Therefore, factors like charge carrier mobility and rate of charge transfer and recombination can impact the catalytic efficiency of the material. Additionally, the preparation of semiconductor nanoparticles in the quantum confinement regime (<5.6 nm diameter for CdS) results in further differentiation depending on the size, 10,11 shape, 12 and surface ligation. 11,13 It is common in semiconductors with polytypism to observe a difference in the photocatalytic activity depending on their structure.…”
Section: ■ Introductionmentioning
confidence: 99%
“…Compared to bulk materials, they exhibit the advantages [53][54][55]: (i) Nanostructure materials generate the strong quantum confinement resulting in more stable excitons and enhancing the energy transfer efficiency. (ii) Nanostructure materials can be easily combined with other materials and used to design optoelectronic devices by stacking homojunctions or heterojunctions with specific wavelength ranges.…”
Section: Introductionmentioning
confidence: 99%
“…33 VS 4 displayed a Peierls distortion, a narrow bandgap of B1.0 eV and relatively high electronic conductivity, serving as a novel and promising cathode material with high capacity and long cycling life for Mg batteries. 34 The reduced dimension of the quasi-1D materials gives rise to significant spatial anisotropy, quantum confinement 35,36 and many new properties, such as optical anisotropy, 37,38 topological insulator, 39 charge density wave, 40 superconductor-insulator transition, 41 and bandgap opening. 42,43 The excellent properties and interesting physics of the quasi-1D trichalcogenides and tetrachalcogenides have attracted interest in NbS 4 .…”
Section: Introductionmentioning
confidence: 99%