Influence of selenization atmosphere on the Cu 2 ZnSn(S,Se) 4 thin films and its correlation to the performance of solar cells

Chen, Guilin; Wang, Weihuang; Zhang, Biyun; Chen, Shuiyuan; Huang, Zhigao; Zhuang, Bin

doi:10.1016/j.materresbull.2017.05.053

Cited by 15 publications

(8 citation statements)

References 27 publications

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“…The prominent peak related to the CZTSSe crystal phase transfers toward lower 2θ values with a certain increase in the Se 2– ion concentration; it might be due to the smaller S 2– ions (0.184 nm) substituted with larger Se 2– ions (0.198 nm) gently to maintain the same CZTSSe crystal structure. The stronger ionic radii of Se 2– compared to S 2– ions is due to increment in lattice parameters, which results in the peak shift. ,,, Comparative XRD parameters of the CZTSSe films were calculated from the relation Δ d (Å) = d e x p (Å) – d jcpds (Å) and summarized in Table S1. The crystallite size of all samples was estimated with Scherrer’s eq …”

Section: Results and Discussionmentioning

confidence: 99%

“…The stronger ionic radii of Se 2− compared to S 2− ions is due to increment in lattice parameters, which results in the peak shift. 8,25,38,39 Comparative XRD parameters of the CZTSSe films were calculated from the relation Δd (Å) = d exp (Å) − d jcpds (Å) and summarized in Table S1. The crystallite size of all samples was estimated with Scherrer's eq 15.…”

Section: Resultsmentioning

confidence: 99%

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Investigating the Role of Selenium-Ion Concentration on Optoelectronic Properties of the Cu₂ZnSn(S_1–xSe_x)₄ Thin Films

Patil

Khot

Mali

et al. 2020

Ind. Eng. Chem. Res.

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Recently, deposition of Cu 2 ZnSn(S 1−x Se x ) 4 (CZTSSe) thin films directly onto substrates via a cost-effective hydrothermal route has become a promising approach for their further development. We investigated the influence of the Se 2− ion content on the growth and optoelectronic properties of CZTSSe thin films. The synthesized CZTSSe nanocrystalline films showed considerable refining in their optoelectronic and photovoltaic properties. The optical absorption of CZTSSe films revealed that the band gap energy decreases from 1.5 to 1.42 eV with increment in the Se 2− ion concentration. Structural analysis confirms the improvement in the crystallinity with the kesterite crystal structure, which was also validated by ( 112) plane shifting with varying Se 2− ion concentration. Surface morphological and structural analyses confirm the formation of a highly uniform, well-crystalline, and compactly interconnected nanosphere-like morphology. Compositional analysis confirms that the CZTSSe film shows desired stoichiometric ratios with Cu, Zn, Sn, S, and Se in +1, +2, +4, −2, and −2 oxidation states, respectively, in Cu 2 ZnSn(S 1−x Se x ) 4 compositions. The promising composition is observed for Cu 2 ZnSn(S 1−x Se x ) 4 films with x = 0.075 Se-ion concentration. Photoelectrochemical solar cells assembled for the CZTSSe photoelectrode exhibited a current density (J sc ) of 4.64 mA/cm 2 and an open-circuit voltage (V oc ) of 542 mV, leading to a photoconversion efficiency of 3.62%. Our electrochemical impedance spectroscopy suggests lower values of charge-transfer resistance (R ct ) generated at the photoelectrode−electrolyte interface, which is in well agreement with photoelectrochemical solar cell performance.

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Section: Results and Discussionmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Investigating the Role of Selenium-Ion Concentration on Optoelectronic Properties of the Cu₂ZnSn(S_1–xSe_x)₄ Thin Films

Patil

Khot

Mali

et al. 2020

Ind. Eng. Chem. Res.

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“…The result might be nucleation and growth of more selenium rich-CZTSSe grains, at the expense of established grains [17], [31]. The kinetic enhancement of selenization by sulfur removal [32] might aid in this selenium-rich nucleation. If the selenium source is also exhausted, the formation of voids by decomposition of the CZTSSe could only be expected to increase.…”

Section: Discussionmentioning

confidence: 99%

“…63 Cu, 64 Zn, and 120 Sn are presented normalized to their maximum intensities and scaled for clarity. 23 Na, 32 S, and 80 Se were normalized by the maximum 98 Mo intensity.…”

Section: Methodsmentioning

confidence: 99%

Selenium Inclusion in Cu₂ZnSn(S,Se)₄Solar Cell Absorber Precursors for Optimized Grain Growth

Ross

Grini

Rudisch

et al. 2018

IEEE J. Photovoltaics

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Cu 2 ZnSn(S,Se) 4 precursors are fabricated by compound cosputtering from metal sulfide and selenide targets, and annealed in mixed argon, sulfur, and selenium atmosphere at temperatures between 540 and 580 • C and at pressures between 24 and 47 kPa. We produce solar cell devices from these absorbers that range from 2.0% to 9.0% power conversion efficiency. We extensively characterize the morphology and elemental composition of the absorbers, and are able to closely relate the annealing conditions, precursor sulfur-selenium content, device performance, and absorber quality. We develop a qualitative model which relates the sulfur-selenium distribution in the precursor and the relative partial pressures of sulfur and selenium during the annealing process to the absorber properties. We show that selenium inclusion in the precursor allows more rapid recrystallization of the absorber at lower temperature. Alternating stacking of sulfur and selenium containing precursor material leads to differential rates of recrystallization, which allows some control over the morphology of the annealed absorber and Zn(S,Se) secondary phase segregation in that absorber. We further show that selenium containing precursors can be used to fabricate the superior devices relative to sulfur-only precursors, when the annealing phase space is subject to severe practical restrictions.

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“…Then, the precursor films are heat treated in a selenium-rich environment. Consequently, to further obtain high-quality CNZTSSe devices, it is necessary to optimize the selenization conditions of CNZTSSe films [ 17 , 18 , 19 ].…”

Section: Introductionmentioning

confidence: 99%

Insight into the Effect of Selenization Temperature for Highly Efficient Ni-Doped Cu2ZnSn(S,Se)4 Solar Cells

Zeng

Sui

et al. 2022

Nanomaterials

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Cu2Ni0·05Zn0·95Sn(S,Se)4 (CNZTSSe) films were synthesized on Mo-coated glass substrates by the simple sol–gel means combined with the selenization process, and CNZTSSe-based solar cells were successfully prepared. The effects of selenization temperature on the performance and the photoelectric conversion efficiency (PCE) of the solar cells were systematically studied. The results show that the crystallinity of films increases as the selenization temperature raises based on nickel (Ni) doping. When the selenization temperature reached 540 °C, CNZTSSe films with a large grain size and a smooth surface can be obtained. The Se doping level gradually increased, and Se occupied the S position in the lattice as the selenization temperature was increased so that the optical band gap (Eg) of the CNZTSSe film could be adjusted in the range of 1.14 to 1.06 eV. In addition, the Ni doping can inhibit the deep level defect of SnZn and the defect cluster [2CuZn + SnZn]. It reduces the carrier recombination path. Finally, at the optimal selenization temperature of 540 °C, the open circuit voltage (Voc) of the prepared device reached 344 mV and the PCE reached 5.16%.

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Influence of selenization atmosphere on the Cu 2 ZnSn(S,Se) 4 thin films and its correlation to the performance of solar cells

Cited by 15 publications

References 27 publications

Investigating the Role of Selenium-Ion Concentration on Optoelectronic Properties of the Cu₂ZnSn(S_1–xSe_x)₄ Thin Films

Investigating the Role of Selenium-Ion Concentration on Optoelectronic Properties of the Cu₂ZnSn(S_1–xSe_x)₄ Thin Films

Selenium Inclusion in Cu₂ZnSn(S,Se)₄Solar Cell Absorber Precursors for Optimized Grain Growth

Insight into the Effect of Selenization Temperature for Highly Efficient Ni-Doped Cu2ZnSn(S,Se)4 Solar Cells

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Influence of selenization atmosphere on the Cu 2 ZnSn(S,Se) 4 thin films and its correlation to the performance of solar cells

Cited by 15 publications

References 27 publications

Investigating the Role of Selenium-Ion Concentration on Optoelectronic Properties of the Cu2ZnSn(S1–xSex)4 Thin Films

Investigating the Role of Selenium-Ion Concentration on Optoelectronic Properties of the Cu2ZnSn(S1–xSex)4 Thin Films

Selenium Inclusion in Cu2ZnSn(S,Se)4Solar Cell Absorber Precursors for Optimized Grain Growth

Insight into the Effect of Selenization Temperature for Highly Efficient Ni-Doped Cu2ZnSn(S,Se)4 Solar Cells

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Product

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Investigating the Role of Selenium-Ion Concentration on Optoelectronic Properties of the Cu₂ZnSn(S_1–xSe_x)₄ Thin Films

Investigating the Role of Selenium-Ion Concentration on Optoelectronic Properties of the Cu₂ZnSn(S_1–xSe_x)₄ Thin Films

Selenium Inclusion in Cu₂ZnSn(S,Se)₄Solar Cell Absorber Precursors for Optimized Grain Growth