Influence of segregation in quantum well structures

Abstract

The potential associated with quantum well (QW) structures is usually assumed to be a step function; this implies a compositional abruptness at each interface. But abrupt interfaces do not occur in practice, especially if one of the atoms segregates during growth. This leads to asymmetries in the QW potentials which could radically affect device performance.

Growth of laser diode structures with emission wavelength beyond 1100nm for yellow–green emission by frequency conversion

“…For this reason two different quantum well thicknesses w QW of 5 nm and 7 nm were selected with different cumulative strain (see samples A and B in Table 1). The thicker QW contains less indium for the desired emission wavelength of 1120 nm and therefore lower effects of indium fluctuations at the heterojunctions on device performance are expected [10,11]. For strain compensation the highly compressively strained QWs are embedded in tensily strained GaAsP barriers.…”