2006
DOI: 10.1016/j.matchemphys.2005.07.044
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Influence of Sb, In and Bi dopants on the response of ZnO thick films to VOCs

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Cited by 46 publications
(17 citation statements)
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“…The results clearly showed that the element Sb (Sb 3d 3/2 peaks at 540.42 and 539.54 eV), the element Bi (Bi 4f 5/2 peaks at 164.07 and 162.41 eV, Bi 4f 7/2 peaks at 158.61 and 157.11 eV) and the element Sn (Sn 3d 5/2 peaks at 496.97 and 493.72 eV, Sn 3d 3/2 peaks at 485.49 and 483.76 eV) exist in their corresponding co-doped ZnO samples [25,26]. Further, the position of these peaks confirms the presence of co-doping ions in multi valence state such as Sb 5+ and Sb 3+ in Mn, Sb co-doped ZnO, Bi 5+ and Bi 3+ in Mn, Bi co-doped ZnO and Sn +4 and Sn +2 in Mn, Sn co-doped ZnO samples, respectively.…”
Section: Resultsmentioning
confidence: 99%
“…The results clearly showed that the element Sb (Sb 3d 3/2 peaks at 540.42 and 539.54 eV), the element Bi (Bi 4f 5/2 peaks at 164.07 and 162.41 eV, Bi 4f 7/2 peaks at 158.61 and 157.11 eV) and the element Sn (Sn 3d 5/2 peaks at 496.97 and 493.72 eV, Sn 3d 3/2 peaks at 485.49 and 483.76 eV) exist in their corresponding co-doped ZnO samples [25,26]. Further, the position of these peaks confirms the presence of co-doping ions in multi valence state such as Sb 5+ and Sb 3+ in Mn, Sb co-doped ZnO, Bi 5+ and Bi 3+ in Mn, Bi co-doped ZnO and Sn +4 and Sn +2 in Mn, Sn co-doped ZnO samples, respectively.…”
Section: Resultsmentioning
confidence: 99%
“…For example, MOS sensors are particularly useful for monitoring VOCs due to such advantages as low cost, rapid sensor response and recovery times, and ease of e-nose manufacture [711]. However, certain MOS sensors are not widely used for interior environmental-monitoring applications, such as monitoring indoor air quality in buildings, because they are often limited by the lack of selectivity towards VOCs from similar chemical classes.…”
Section: The Nature Of Electronic-nose Devices and Target Chemicals Dmentioning
confidence: 99%
“…It is well known that oxygen tends to site at grain bound barriers in polycrystalline films both at grain boundaries and also on the surface. These oxygen spaces may produce potential barrier for charge carriers [31][32][33]. So, we think that this change is due to the decreasing oxygen deficiencies because of the micro structural compositional change of the grains, in addition to other phenomena such as disorder and defects at the grainboundaries.…”
Section: Resultsmentioning
confidence: 99%