Influence of ridge geometry on lateral mode stability of (In/Al)GaN laser diodes

Abstract

As a contribution to the current intense research efforts on wide band‐gap semiconductor devices which are directed towards the development of commercial blue laser diodes, in this issue's Editor's Choice the optimization of the waveguide structure, to achieve stable laser mode operation, is investigated. The cover picture shows the near‐field intensity distribution of the fundamental and first order lateral modes of a blue (Al,In)GaN laser diode together with the double longitudinal mode comb associated with these modes. The first author, Ulrich T. Schwarz, works on optical spectroscopy, characterization, and simulation of blue laser diodes and LEDs. Apart from semiconductor optoelectronics, the focus of his scientific interest is on modern optics, covering propagation invariant Bessel beams, Ince‐Gaussian beams and optical vortices.

Waveguide design of green InGaN laser diodes

“…5 (red line) and does not leak in the GaN substrate anymore. Also the laser performance improves as the overlap with the highly absorbing p‐GaN 10, 11 decreases and the filling factor increases, giving an estimated decrease in threshold current of about 30%. The challenge of AlInN growth is the precise control of the amount of Indium and strain with good crystal quality 12.…”