Influence of reactor cleanness and process conditions on the growth by PVT and the purity of 4H and 6H SiC crystals

Grosse, Philippe; Basset, G.; Calvat, C.; Couchaud, M.; Faure, C; Ferrand, B; Grange, Y.; Anikin, M. M.; Bluet, Jean‐Marie; Chourou, K; Madar, R.

doi:10.1016/s0921-5107(98)00445-0

Cited by 12 publications

(9 citation statements)

References 7 publications

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“…Several argon purge cycles were carried out during the process to assist in the removal of nitrogen from the graphite crucible. A 1000 0 C bake out was carried out under vacuum to reduce the concentration of background impurities [22]. Figure 2 shows the temperature profile for a typical 4H-SiC growth using dichlorosilane.…”

Section: Control Samples Were Grown With Standard Precursor Chemistrimentioning

confidence: 99%

High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor

Chowdhury

Chandrasekhar

Klein

et al. 2011

Journal of Crystal Growth

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Thick, high quality 4H-SiC epilayers have been grown in a vertical hot-wall chemical vapor deposition system at a high growth rate on (0001) 8 0 off-axis substrates. We discuss the use of dichlorosilane as the Si-precursor for 4H-SiC epitaxial growth as it provides the most direct decomposition route into SiCl 2 , which is the predominant growth species in chlorinated chemistries. A specular surface morphology was attained by limiting the hydrogen etch rate until the system was equilibrated at the desired growth temperature. The RMS roughness of the grown films ranged from 0.5-2.0 nm with very few morphological defects (carrots, triangular defects, etc.) being introduced, while enabling growth rates of 30-100 µm/hr, 5-15 times higher than most conventional growths. Site-competition epitaxy was observed over a wide range of C/Si ratios, with doping concentrations < 1x10 14 cm -3 being recorded. X-ray rocking curves indicated that the epilayers were of high crystallinity, with linewidths as narrow as 7.8 arcsec being observed, while microwave photoconductive decay (µPCD) measurements indicated that these films had high injection (ambipolar) carrier lifetimes in the range of 2 µs.3

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Section: Control Samples Were Grown With Standard Precursor Chemistrimentioning

confidence: 99%

High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor

Chowdhury

Chandrasekhar

Klein

et al. 2011

Journal of Crystal Growth

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show abstract

“…A 1000 0 C bake out was carried out under vacuum to reduce the concentration of background impurities [21]. Several argon purge cycles were carried out during the process to assist in the removal of nitrogen from the graphite crucible.…”

Section: Methodsmentioning

confidence: 99%

Recent Developments in SiC Homoepitaxy Using Dichlorosilane for High Power Devices

et al. 2010

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Thick and high quality 4H-SiC epilayers have been grown in a vertical hot-wall chemical vapor deposition system at a high growth rate on (0001) 8 0 off-axis substrates. We discuss the use of dichlorosilane as the Si-precursor for 4H-SiC epitaxial growth as it provides the most direct decomposition route into SiCl 2 , which is the predominant growth species in chlorinated chemistries. The RMS roughness of the films ranged from 0.5-2.0 nm with very few morphological defects (carrots, triangular defects, etc.) being introduced, while enabling growth rates of 30-100 µm/hr, 5-15 times higher than most conventional growths. A specular surface morphology was attained by limiting the hydrogen etch rate until the system was equilibrated at the desired growth temperature. Site-competition epitaxy was observed over a wide range of C/Si ratios, with doping concentrations as low as 2x10 14 cm -3 being recorded. X-ray rocking curves indicated that the epilayers were of high crystallinity, with linewidths as narrow as 7.8 arcsec being observed, while microwave photoconductive decay (µPCD) measurements indicated that these films had high injection (ambipolar) carrier lifetimes in the range of 2 µs. These films also appeared to be free of polytype inclusions.

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“…196 Moreover, GDMS was shown to be the method of choice to measure differences between unpurified and purified graphite and SiC for nuclear reactors. 197 Another application is thin-film Al:ZnO (AZO) produced by atomic layer deposition (ALD) as a transparent conductive oxide (TCO). 198 The GDMS instrument was calibrated to determine the Al content of AZO thin films on Si using six calibration samples previously characterised by Rutherford backscattering spectrometry (RBS).…”

Section: Refractory Metalsmentioning

confidence: 99%

Glow Discharge Mass Spectrometry

Venzago

Pisonero

2014

Sector Field Mass Spectrometry for Elemental and Isotopic Analysis

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GDMS is based on a glow discharge ion source, which generates ions through sputtering (cathodic sputtering) of a solid surface and ionisation (electron impact or Penning ionisation) by a glow discharge plasma. A glow discharge plasma is formed by the passage of an electric current through a low-pressure gas. The ions are separated in a mass spectrometer and finally recorded at a detector. GDMS is a method for the direct determination of trace elements in solid states providing traceelement information of solid samples. Beside the direct current (DC) mode, analytical glow discharges can also be operated in a radiofrequency (RF) mode, most often applied for analysis of nonconducting samples (Figures 13.1 and 13.2).

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Influence of reactor cleanness and process conditions on the growth by PVT and the purity of 4H and 6H SiC crystals

Cited by 12 publications

References 7 publications

High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor

High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor

Recent Developments in SiC Homoepitaxy Using Dichlorosilane for High Power Devices

Glow Discharge Mass Spectrometry

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