Influence of rapid thermal annealing effect on electrical and structural properties of Pd/Ru Schottky contacts to n-type GaN

Effect of Temperature Dependence on Electrical Characterization of <i>p-n</i> GaN Diode Fabricated by RF Magnetron Sputtering

“…In the present work, the p-n GaN diode has a square shape and its area was measured to be 1 mm , based on the effective electron mass (m * = 0.22 m e ) for GaN [16]- [19]. The plot of ln I versus V, based upon Equation (1), can beused to derive the saturation current, which can be obtained by extrapolated the straight line of the linear region of the semilog plot to zero applied voltage.…”

“…It can be obtained from the slope of the linear region of ln I-V characteristics under the forward bias. It is given by [5] [16]- [19] to 0.69 eV at 200˚C. By using Equation (4), the ideality factor n decreased with the increase in the testing temperature, dropped from 5.0 at 25˚C to 2.5 at 200˚C.…”

Temperature-dependent electrical properties of the sputtering-made n-InGaN/p-GaN junction diode with a breakdown voltage above 20V

“…With the plot of ln I versus V, the saturation current I 0 can be determined by intersecting the extrapolated straight lines from the linear region of the semilog plot to the applied voltage at 0 V. The barrier height (BH) can be approximately determined by using the equation [13][14][15][16]:…”

“…Moreover, the ideality factor n can be obtained from the slope of the linear region in forward bias. It is given by [4,[16][17][18]:…”

“…This method involves a function, F(V,I), plotted versus V. The modified Norde function is defined as [5,16,20]:…”