2019
DOI: 10.1088/2053-1591/ab2554
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Influence of pulse frequency on the morphology, structure and optical properties of ZnO films prepared by pulsed electrodeposition

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Cited by 8 publications
(3 citation statements)
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“…In Figure 3c) is noticed that band gap values increase with deposition frequency from 1.83 to 1.88 eV. The difference with characteristic Cu 2 O band gap value (2.2 eV) could be due to the presence of defects [10].…”
Section: Resultsmentioning
confidence: 83%
See 1 more Smart Citation
“…In Figure 3c) is noticed that band gap values increase with deposition frequency from 1.83 to 1.88 eV. The difference with characteristic Cu 2 O band gap value (2.2 eV) could be due to the presence of defects [10].…”
Section: Resultsmentioning
confidence: 83%
“…Therefore, a graphene oxide (GO) layer is proposed in this work as a separator between n-type (ZnO) and p-type (Cu2O) semiconductors to avoid ion migration and to favor device stability. On the other hand, it has been demonstrated that pulsed electrodeposition of semiconductors films produces changes in nanostructuration, crystallinity, grain size and optical properties [10]. In this work, the GO deposition effect onto Cu2O films deposited in different frequencies on its structure and optical properties is studied, as a first step for a full device development.…”
Section: Introductionmentioning
confidence: 99%
“…The disappearance of Cd impurities from the samples deposited under pulsed mode may be explained by the controlled growth of CdS during the pulsed deposition, where the off‐time duration allows the relaxation and the rearrangement of deposited atoms, which creates a new nucleation cites. [ 34 ] Hence, the atomic composition of the layer can be altered and the layer uniformity improved. [ 35 ]…”
Section: Resultsmentioning
confidence: 99%