2014
DOI: 10.1016/j.apsusc.2013.11.041
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Influence of processing conditions on the structure, composition and ferroelectric properties of sputtered PZT thin films on Ti-substrates

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Cited by 20 publications
(17 citation statements)
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“…6 in binding energy, confirming the rigid nature of the etching induced shift. In the Pb 4f spectrum a new component at lower binding energy appears, and corresponds to metallic Pb 0 at 136.07 eV such as described by Lu and Zhu [28]; similarly, a partial reduction of Ti is evidenced with an additional component to lower binding energy (Ti II ) at 456.64 eV), as also observed previously [17]. Both results provide chemical confirmation of the surface reduction after IBE.…”
Section: Ion Beam Etchingsupporting
confidence: 85%
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“…6 in binding energy, confirming the rigid nature of the etching induced shift. In the Pb 4f spectrum a new component at lower binding energy appears, and corresponds to metallic Pb 0 at 136.07 eV such as described by Lu and Zhu [28]; similarly, a partial reduction of Ti is evidenced with an additional component to lower binding energy (Ti II ) at 456.64 eV), as also observed previously [17]. Both results provide chemical confirmation of the surface reduction after IBE.…”
Section: Ion Beam Etchingsupporting
confidence: 85%
“…The absence of a clear grain structure is due to the IBE-induced amorphization of the surface, well-known in the literature [24,20,26]. IBE can also reduce the surface [17,26] in which case one would expect a shift in the electronic levels similar to that induced by n-type doping of semiconductors. In order to compare the core level spectra before and after IBE we must first correct the energy scale for the electronic effect resulting from n-doping.…”
Section: Ion Beam Etchingmentioning
confidence: 93%
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“…34 To the best of the present authors' knowledge, no detail work exists regarding the tuning of the growth morphology of WO 3 nanowires on platinised-silicon substrates by controlling the growth parameters (mainly laser energy) especially in PLD. 37 In that regards our study provides an in-depth knowledge regarding the material substrate interface that ultimately controls the material physical properties. Therefore, many efforts have been focused on the improvement of synthetic routes of 1D WO 3 nanostructures such as nanowires and exploration of the 1D direction crystal growth mechanism.…”
Section: Introductionmentioning
confidence: 95%
“…And the advantages of PZT material devices are high sensitivity, fast response, high flexibility, and increased anisotropy . PZT powders and thin films have been synthesized in many different ways including radio frequency magnetron sputtering, laser ablation, chemical vapor deposition, sol–gel, metallo‐organic decomposition, and ball milling . However, PZT fibers have been fabricated by a few methods such as metallo‐organic decomposition, electrospinning, and hydrothermal synthesis .…”
Section: Introductionmentioning
confidence: 99%