Influence of Prestrained Graded InGaN interlayer on the Optical Characteristics of InGaN/GaN MQW-based LEDs

Das, Samadrita; Lenka, Trupti Ranjan; Talukdar, Fazal A.; Velpula, Ravi Teja; Nguyen, Hieu Pham Trung; Crupi, Giovanni

doi:10.1109/nusod54938.2022.9894827

Cited by 2 publications

(1 citation statement)

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“…[11][12][13] From the past research, prestrained growth method plays a crucial role for improving the efficiency of GaN/InGaN multi-quantum wells (MQWs). 14 While depositing of the prestrain layers before the MQW, a tensile strain is created in the quantum barrier, 15 thus enhancing the incorporation of large sized indium atoms. Consequently, this leads to the reduction of QCSE.…”

Section: Introductionmentioning

confidence: 99%

The role of indium composition in In_xGa_1−xN prestrained layer towards optical characteristics of EBL free GaN/InGaN nanowire LEDs for enhanced luminescence

Das,

Lenka,

Talukdar

et al. 2023

Int J Numerical Modelling

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In this work, an electron blocking layer (EBL) free light emitting diode (LED) nanowire is proposed with alternate prestrained layers of InxGa1−xN/GaN, which are inserted between the GaN/InGaN multi‐quantum wells (MQWs) and n‐GaN layer. This study signifies the role of prestrained layers on the piezoelectric polarization of LED nanowires, for enhanced luminescence. When compared with the conventional one, the EBL free LED nanowire with prestrained layer shows an enhancement of ~2.897% efficiency, which occurs due to the reduction of polarization field in the active region. The LED with 15% indium in the prestrained layer obtains a maximum efficiency of 85.21% along with a minimum efficiency droop of 3.848% at 40 mA injected current. The proposed III‐nitride LED nanostructure allows for achieving superior optical power across the output spectral range.

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Section: Introductionmentioning

confidence: 99%

The role of indium composition in In_xGa_1−xN prestrained layer towards optical characteristics of EBL free GaN/InGaN nanowire LEDs for enhanced luminescence

Das,

Lenka,

Talukdar

et al. 2023

Int J Numerical Modelling

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Design and Performance Analysis of Electron Blocking Layer free GaN/AlInN/GaN Nanowire Deep-Ultraviolet LED

Das

Lenka

Talukdar

et al. 2022

2022 IEEE International Conference on Emerging Electronics (ICEE)

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Influence of Prestrained Graded InGaN interlayer on the Optical Characteristics of InGaN/GaN MQW-based LEDs

Cited by 2 publications

References 5 publications

The role of indium composition in In_xGa_1−xN prestrained layer towards optical characteristics of EBL free GaN/InGaN nanowire LEDs for enhanced luminescence

The role of indium composition in In_xGa_1−xN prestrained layer towards optical characteristics of EBL free GaN/InGaN nanowire LEDs for enhanced luminescence

Design and Performance Analysis of Electron Blocking Layer free GaN/AlInN/GaN Nanowire Deep-Ultraviolet LED

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Influence of Prestrained Graded InGaN interlayer on the Optical Characteristics of InGaN/GaN MQW-based LEDs

Cited by 2 publications

References 5 publications

The role of indium composition in InxGa1−xN prestrained layer towards optical characteristics of EBL free GaN/InGaN nanowire LEDs for enhanced luminescence

The role of indium composition in InxGa1−xN prestrained layer towards optical characteristics of EBL free GaN/InGaN nanowire LEDs for enhanced luminescence

Design and Performance Analysis of Electron Blocking Layer free GaN/AlInN/GaN Nanowire Deep-Ultraviolet LED

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The role of indium composition in In_xGa_1−xN prestrained layer towards optical characteristics of EBL free GaN/InGaN nanowire LEDs for enhanced luminescence

The role of indium composition in In_xGa_1−xN prestrained layer towards optical characteristics of EBL free GaN/InGaN nanowire LEDs for enhanced luminescence