Influence of potential well thickness on the carrier transport characteristics of InGaAs quantum dot laser diodes

Dong, Hailiang; Jia, Zhigang; Wei, Jia; Liang, Jinxing; Wang, Zhiyong; Xua, Bingshe

doi:10.1039/d2cp03078k

Phys. Chem. Chem. Phys.

2022

DOI: 10.1039/d2cp03078k

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Influence of potential well thickness on the carrier transport characteristics of InGaAs quantum dot laser diodes

Hailiang Dong

Zhigang Jia

Jia Wei

et al.

Abstract: The characteristics of InGaAs quantumn dot laser diodes have been investigated by inserting different thickness InGaAs well in active zone. The simulation results indicated that the maximum output power of...

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2024

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High-performance multi-junction cascade 1.3 µm quantum dot vertical cavity surface-emitting laser

Ping,

Bo,

Liang

et al. 2024

Opt. Lett.

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A high-performance 5-junction cascade quantum dot (QD) vertical cavity surface-emitting laser (VCSEL) with 1.3 µm wavelength was designed. The characteristics of the QD as active regions and tunnel junctions are combined to effectively increase output power. The photoelectric characteristics of single-junction, 3-junction cascade, and 5-junction cascade QD VCSELs are compared at continuous-wave conditions. Results indicate that the threshold current gradually decreases, and the output power and slope efficiency exponential increase with the increase of the number of active regions. The peak power conversion efficiency of 58.4% is achieved for the 5-junction cascade individual QD VCSEL emitter with 10 µm oxide aperture. The maximum slope efficiency of the device is 6.27 W/A, which is approximately six times than that of the single-junction QD VCSEL. The output power of the 5-junction cascade QD VCSEL reaches 188.13 mW at injection current 30 mA. High-performance multi-junction cascade 1.3-µm QD VCSEL provides data and theoretical support for the preparation of epitaxial materials.

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High-performance multi-junction cascade 1.3 µm quantum dot vertical cavity surface-emitting laser

Ping,

Bo,

Liang

et al. 2024

Opt. Lett.

View full text Add to dashboard Cite

show abstract

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Influence of potential well thickness on the carrier transport characteristics of InGaAs quantum dot laser diodes

Abstract: The characteristics of InGaAs quantumn dot laser diodes have been investigated by inserting different thickness InGaAs well in active zone. The simulation results indicated that the maximum output power of...

Cited by 1 publication

References 38 publications

High-performance multi-junction cascade 1.3 µm quantum dot vertical cavity surface-emitting laser

High-performance multi-junction cascade 1.3 µm quantum dot vertical cavity surface-emitting laser

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