2015
DOI: 10.1007/s10971-015-3741-1
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Influence of potassium permanganate on the anisotropic growth and enhanced UV emission of ZnO nanostructures using hydrothermal process for optoelectronic applications

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Cited by 29 publications
(53 citation statements)
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“…It consists of two peaks; a sharp NBE around 385 nm and a broad DLE ranging from 450 nm to 750 nm centered around 580 nm. It is interesting to note that DLE got suppressed by incorporation of KMnO 4 during the growth which creates an oxygen rich environment [23]. Besides this a blue shift in UV peak was observed in samples grown with additive due to Burstein-Moss effect.…”
Section: Optical Characterizationmentioning
confidence: 94%
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“…It consists of two peaks; a sharp NBE around 385 nm and a broad DLE ranging from 450 nm to 750 nm centered around 580 nm. It is interesting to note that DLE got suppressed by incorporation of KMnO 4 during the growth which creates an oxygen rich environment [23]. Besides this a blue shift in UV peak was observed in samples grown with additive due to Burstein-Moss effect.…”
Section: Optical Characterizationmentioning
confidence: 94%
“…The nanorods were uniformly distributed over the entire substrate. The mechanism of growth of ZNR with KMnO 4 addition has been discussed in detail in our previous report [23]. Briefly, presence of additive has strongly influenced hydrolysis of HMTA and ceased formation of dumbbells, while the oxygen rich environment in the nutrient solution has led to the passivation of the defects.…”
Section: Surface Morphology and Structural Characterization -mentioning
confidence: 97%
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“…PMMA, polyaniline, Al 2 O 3 , ZnS, MgO, (3) plasma treatment, (4) thermal annealing in the Ar environment, (5) post growth treatment with H 2 O 2 and most importantly (6) metal coating on ZnO thin lms and nanostructures. [11][12][13][14][15][16][17][18][19][20][21] Much effort has been focused in the area of improved UV emission of ZnO thin lms and nanostructures using metal capping since Okamoto et al demonstrated in their leading work the dramatic emission enhancement from the Agcapped InGaN/GaN quantum well. 22 The primary reason behind the emission enhancement is surface plasmon (SP) resonance arising due to the local electric eld enhancement near the surface of the metal nanoparticles.…”
Section: Introductionmentioning
confidence: 99%
“…11,12 Subsequently, a solution of equimolar (0.1 M) zinc nitrate hexahydrate and HMTA in DI water was prepared. In the next step, 2.5 mM KMnO 4 was added and the solution was stirred before sample immersion and then kept at 110 C for 4 h for nanorod growth.…”
mentioning
confidence: 99%