Influence of Post-Ion-Implantation Annealing Temperature on the Characteristics of Gate Oxide on 4H Silicon Carbide

Abstract

The effect of post-ion implantation annealing on the properties of the SiO2/4H-SiC interface is examined in this paper. It is observed that the surface roughness degrades after the high-temperature Ar annealing, but the oxidation process after the high temperature annealing can improve the surface roughness. To better understand the effect of high-temperature annealing on the gate oxide, the reliability of gate oxide is further studied. The results show that although the surface roughness degrades after high-temperature annealing, the interface state density, tunneling barrier height, breakdown field, and critical electric field for the 10-year lifetime of the thermally grown gate oxide do not degrade.