Influence of post-deposition annealing on the structural, optical and electrical properties of Li and Mg co-doped ZnO thin films deposited by sol–gel technique

Ravichandran, C.; Сринивасан, Г.; Lennon, C. M.; Sivananthan, S.; Kumar, J.

doi:10.1016/j.spmi.2011.03.005

Cited by 38 publications

(13 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Sharp fundamental absorption edges, which correspond to an electronic transition of the films, were observed in the UV range at about 375 nm. The absorption edge of the films was shifted towards longer wavelengths by the annealing; this could be due to the crystallinity improvement of the films [23] because thermally-driven recrystallization can enhance the crystal quality of the films [24]. This is consistent with the result in the inset of Fig.…”

Section: Methodssupporting

confidence: 86%

Influence of annealing temperature on photoluminescence properties and optical constants of N-doped ZnO thin films grown on muscovite mica substrates

Kim

Leem

2015

Physica B: Condensed Matter

View full text Add to dashboard Cite

Section: Methodssupporting

confidence: 86%

Influence of annealing temperature on photoluminescence properties and optical constants of N-doped ZnO thin films grown on muscovite mica substrates

Kim

Leem

2015

Physica B: Condensed Matter

View full text Add to dashboard Cite

“…1(c). The changes in FWHM can be correlated to the grain sizes [14]; the smaller FWHM indicates a larger grain size and a better crystal quality, which may be due to the recrystallization process with sufficient thermal energy supply.…”

Section: X-ray Diffractionmentioning

confidence: 99%

Annealing effects on the structural and optical properties of ZnO nanoparticles with PVA and CA as chelating agents

Mallika

Reddy

2015

J Adv Ceram

View full text Add to dashboard Cite

Abstract:The effects of annealing temperatures and chelating agents on the structural and optical properties of ZnO nanoparticles were investigated. The average particle size of ZnO nanoparticles increased with increase of annealing temperatures. The decrease of the full width at half maximum (FWHM) with increasing annealing temperatures inferred increase of particle/grain growth. The grain sizes were also observed to be increased with increase of annealing temperatures. From the absorption spectra of the samples, the absorption was red-shifted and the energy band gap was blue-shifted with increase of annealing temperatures. A sharp UV emission peak was observed and the intensity of this peak increased with annealing temperatures corresponding to the high crystallinity in the samples. At high annealing temperature of 700 ℃, ZnO exhibited a less intense deep level emission. This negligible deep level emission was attributed to the oxygen vacancies created at higher annealing temperatures.

show abstract

“…Doped ZnO films are generally deposited by pulsed laser deposition (PLD) [44][45][46][47][48], magnetron co-sputtering [49][50][51][52][53][54][55], including direct current (DC) reactive and radio-frequency (RF), molecular beam epitaxy (MBE) [56][57][58][59][60], chemical vapor deposition [61,62] and sol-gel methods [63][64][65][66][67]. It is known that piezoelectricity is related to the crystallographic quality of ZnO films and high c-axis orientation can lead to good piezoelectricity of ZnO films [68][69][70][71][72].…”

Section: Film Growth Of Tm-doped Znomentioning

confidence: 99%

Giant piezoresponse and promising application of environmental friendly small-ion-doped ZnO

Pan

Luo

Yang

et al. 2011

Sci. China Technol. Sci.

View full text Add to dashboard Cite

In recent years, with the growing concerns on environmental protection and human health, new materials, such as lead-free piezoelectric materials, have received increasing attention. So far, three types of lead-free piezoelectric systems have been widely researched, i.e., perovskites, bismuth layer-structured ferroelectrics, and tungsten-bronze type ferroelectrics. This article presents a new type of environmental friendly piezoelectric material with simple structure, the transition-metal(TM)-doped ZnO. Through substituting Zn 2+ site with small size ion, we obtained a series of TM-doped ZnO with giant piezoresponse, such as Zn 0.975 V 0.025 O of 170 pC/N, Zn 0.94 Cr 0.06 O of 120 pC/N, Zn 0.913 Mn 0.087 O of 86 pC/N and Zn 0.988 Fe 0.012 O of 127 pC/N. The tremendous piezoresponses are ascribed to the introduction of switchable spontaneous polarization and high permittivity in TM-doped ZnO.The microscopic origin of giant piezoresponse is also discussed. Substitution of TM ion with small ionic size for Zn 2+ results in the easier rotation of noncollinear TM-O1 bonds along the c axis under the applied field, which produces large piezoelectric displacement and corresponding piezoresponse enhancement. Furthermore, it proposes a general rule to guide the design of new wurtzite semiconductors with enhanced piezoresponses. That is, TM-dopant with ionic size smaller than Zn 2+ substitutes for Zn 2+ site will increase the piezoresponse of ZnO significantly. Finally, we discuss the improved performances of some TM-doped ZnO based piezoelectric devices.

show abstract

Influence of post-deposition annealing on the structural, optical and electrical properties of Li and Mg co-doped ZnO thin films deposited by sol–gel technique

Cited by 38 publications

References 24 publications

Influence of annealing temperature on photoluminescence properties and optical constants of N-doped ZnO thin films grown on muscovite mica substrates

Influence of annealing temperature on photoluminescence properties and optical constants of N-doped ZnO thin films grown on muscovite mica substrates

Annealing effects on the structural and optical properties of ZnO nanoparticles with PVA and CA as chelating agents

Giant piezoresponse and promising application of environmental friendly small-ion-doped ZnO

Contact Info

Product

Resources

About