Influence of porosity and pore size on sputtering of nanoporous structures by low-energy Ar ions: Molecular dynamics study

Sycheva, A. A.; Воронина, Е. Н.; Рахимова, Т. В.; Rakhimov, A. T.

doi:10.1016/j.apsusc.2019.01.078

Cited by 18 publications

(18 citation statements)

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“…Our recent MD simulations for pure crystal Si nanoporous models with a small radius showed that under the irradiation of 200 eV Ar + ions, the near‐surface pores disappear and a continuous solid layer is formed but no significant changes in the structure of the model with larger pores occur . The analysis of Sycheva et al implies that processes of the pore collapse should depend strongly on the energy and type of incident ions. In this study, we used a similar approach for He + , Ar + , and O 2 + ions with nanoporous SiO 2 models.…”

Section: Molecular Dynamic Simulationsmentioning

confidence: 99%

“…Currently, computer simulation can be considered as an effective tool to give an appropriate interpretation of obtained experimental results and to reveal the mechanisms of the processes under investigation. The Monte Carlo (MC) and molecular dynamics (MD)‐based modeling were applied to study effects of the surface roughness and the presence of nanosized structural objects on the sputtering yield, and some important features of these phenomena were explained . To investigate structural changes in nanoporous materials due to ion bombardment, an atomistic approach is needed as it is necessary to analyze trajectories of all atoms, to take into account the energy deposited by incident ions and the excess energy of atoms located on pore walls as well as to consider the possibility of phase transitions caused by the fast energy release.…”

Section: Introductionmentioning

confidence: 99%

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Pore sealing mechanism in OSG low‐k films under ion bombardment

Воронина

Sycheva

Lopaev

et al. 2019

Plasma Processes & Polymers

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Organosilicate glass (OSG) nanoporous films with a low dielectric constant (low-k) are used as interlayer-dielectric insulators for advanced interconnects of ultra-large-scale integration devices. Plasma treatment of these materials can lead to their degradation resulting in increasing k-value and reducing lifetime and reliability. However, for some OSG films, the densification of the uppermost surface layer and pore sealing was observed under ion irradiation. This paper presents the results of a combined experimental and modeling study of mechanisms of low-k film densification by ion bombardment depending on the film-pore size, ion type, and energy.The obtained results reveal that experimentally observed densification and pore sealing of uppermost layers of OSG films occur via collapse of near-surface pores under the impact of energetic ions. K E Y W O R D Slow-k dielectrics, molecular dynamics, nanoporous materials, plasma damage, pore sealing

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Section: Molecular Dynamic Simulationsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Pore sealing mechanism in OSG low‐k films under ion bombardment

Воронина

Sycheva

Lopaev

et al. 2019

Plasma Processes & Polymers

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“…Экспериментально с помощью методов эллипсометрической порометрии [1] и рентгеновской рефлектометрии [2] было показано, что воздействие ионов инертных газов на органосиликатные пленки с малым размером пор (менее 1.5 nm) вызывает формирование сплошного слоя на поверхности материала вследствие схлопывания пор. Эффекты схлопывания пор в кремниевых нанопористых моделях под действием ионов Ar с энергией 200 eV изучались в [3,4] методом молекулярной динамики (МД). В рамках настоящей работы проведено исследование методом МД результатов облучения ионами He и Ar низких энергий (50−200 eV) аналогичных моделей на основе кремния и диоксида кремния.…”

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“…МД-моделирование проводилось с накоплением повреждений (как, например, в [10,11]). Подавление перегрева материала осуществлялось благодаря периодическому воздействию на систему внешнего термостата Берендсена при температуре 300 K в соответствии с алгоритмом, подробно описанным в [3,4,11]. Вычисления выполнялись с помощью свободного программного пакета LAMMPS [12] с использованием оборудования Центра коллективного пользования сверхвысокопроизводительными вычислительными ресурсами МГУ им.…”

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“…Ломоносова. В [3,4] показано, что под воздействием ионов Ar на модели M44/28(Si) происходит деформация пор, однако существенных изменений в морфологии материала не наблюдается. В случае модели M22/08(Si) с малыми порами в приповерхностных слоях материала происходит интенсивное схлопывание пор, в результате которого образуется непрерывный сплошной слой, препятствующий дальнейшему проникновению ионов и активных радикалов плазмы в расположенные ниже поры.…”

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Особенности воздействия ионов He и Ar низких энергий на нанопористые Si/SiO-=SUB=-2-=/SUB=--материалы

Сычева¹,

Воронина²

2020

Письма В Журнал Технической Физики

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In this paper molecular dynamics simulations of low-energy (50–200 eV) ion irradiation of nanoporous Si/SiO2-based materials were performed. Obtained results confirm the experimentally observed the densification of the uppermost surface layers of materials with small (less than 1.5 nm) pores due to pore collapse initiated by incident ions. Special features of the irradiation of nanoporous materials with He and Ar low-energy ions and the influence of their energy on structural changes of materials under study are discussed.

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Powder Metallurgy Route for the Synthesis of Multiprincipal Element Alloys Sputtering Targets

et al. 2022

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With the advent of high-entropy alloys (HEAs) in the early 2000s, [1,2] the research activities in the branch of physical metallurgy gained new momentum as witnessed by the huge amount of papers produced on these materials. [3][4][5] The specific term was coined by Yeh and co-workers who attributed the stabilization of simple solid solution phases, often observed in these systems, to high configurational entropy. [2] Restrictions were set on both number of principal elements (≥5) and their concentrations (5-35 at%). [2] In a recent review, Miracle and Senkov suggested to use the broader terms multiprincipal element alloys (MPEAs), complex concentration alloys (CCAs), and baseless alloys (BAs) in order to better conceptualize the immense design space offered by nonconventional alloys without putting limits on composition and microstructure. [4] The 3d transition metal family of MPEAs is by far the most studied one and it can be compared to stainless steels and superalloys. [4] This family contains at least four of the elements Al, Co, Cr, Cu, Fe, Mn, Ni, Ti, and V. [4] Common 4-element branches of this popular alloy family are FeNiCrCo and FeNiCrMn. Being comparable to commercial structural materials, much work has been focused on mechanical properties and their relations to composition and microstructure. In particular, the distinct roles played by Al, Sn, and Nb have been evidenced. [4] Another important area of study is the environmental resistance of structural materials in terms of, e.g., corrosion and wear resistance. [4]

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Influence of porosity and pore size on sputtering of nanoporous structures by low-energy Ar ions: Molecular dynamics study

Cited by 18 publications

References 60 publications

Pore sealing mechanism in OSG low‐k films under ion bombardment

Pore sealing mechanism in OSG low‐k films under ion bombardment

Особенности воздействия ионов He и Ar низких энергий на нанопористые Si/SiO-=SUB=-2-=/SUB=--материалы

Powder Metallurgy Route for the Synthesis of Multiprincipal Element Alloys Sputtering Targets

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