Influence of polymer binder on the performance of diF-TES-ADT based organic field effect transistor

Salzillo, Tommaso; D’Amico, Francesco; Montes, Nieves; Pfattner, Raphael; Mas‐Torrent, Marta

doi:10.1039/d0ce01467b

Cited by 11 publications

(14 citation statements)

References 35 publications

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“…UV-Resonant Raman: UVRR spectra were measured at the Elettra Synchrotron radiation facility in Trieste, employing the same experimental setup adopted in reference. [57] An excitation wavelength from a diode laser tuned at 266 nm has been used.…”

Section: Methodsmentioning

confidence: 99%

Chemical Doping of the Organic Semiconductor C8‐BTBT‐C8 Using an Aqueous Iodine Solution for Device Mobility Enhancement

Babuji

Temiño

et al. 2022

Adv Materials Technologies

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Despite these encouraging results, the performance of OFETs is still severely limited by factors such as contact resistance (R c ) [9] and charge trapping. [10] When the highest occupied molecular orbital (HOMO) or the lowest unoccupied molecular orbital (LUMO) of a p-type or n-type OSC, respectively, and the electrodes work-function are not aligned, charge injection is significantly hindered by the high energy barrier and high contact resistance values are extracted. [11] In order to confront these issues, different electrode engineering approaches have been proposed. For example, the work-function of the metal electrodes can be modified to match the OSC energy level by using self-assembled molecular monolayers (SAMs) in bottom-contact devices or by inserting a charge injection layer in top-contact OFETs. [12][13][14] Another source that prevents OSCs from realizing their instrinsic charge carrier mobilities is charge trapping. In the energy gap of OSCs, electronic states can appear due to the presence of chemical impurities or defects that trap mobile charge carriers, thus causing OFETs to deviate from the ideal behavior. [15] It has been previously reported that passivation of the dielectric layer or the use of OSC:insulating polymer blends are appealing routes to decrease the dielectric interfacial trap density. [16] Nonetheless, traps are also present at the metal-OSC interface, grain boundaries and thin film structural inhomogeneities. [15] Chemical doping is a suitable way to modify the electronic properties of OSCs, which consists in adding a small percentage of species able to donate (n-doping) or accept (p-doping) an electron to or from the OSC, respectively. Doping of semiconductors is a well-established strategy in inorganic transistors with great success also in organic optoelectronics, especially in OLEDs and solar cells. [17][18][19][20][21][22] Regarding OFET devices, doping has mainly been exploited to increase device mobility, adjust the threshold voltage, fill up trap states, or to improve charge injection by contact doping. [23] Although recent works have demonstrated that doping can be a key enabler for high performing OFETs, the progress of organic semiconductors doping is stillThe performance of organic field-effect transistors is still severely limited by factors such as contact resistance and charge trapping. Chemical doping is considered to be a promising key enabler for improving device performance, although there is a limited number of established doping protocols as well as a lack of understanding of the doping mechanisms. Here, a very simple doping methodo logy based on exposing an organic semiconductor thin film to an aqueous iodine solution is reported. The doped devices exhibit enhanced device mobility, which becomes channel-length independent, a decreased threshold voltage and a reduction in the density of interfacial traps. The device OFF current is not altered, which is in agreement with the spectroscopic data that points out that no charge transfer processes are occurring....

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Section: Methodsmentioning

confidence: 99%

Chemical Doping of the Organic Semiconductor C8‐BTBT‐C8 Using an Aqueous Iodine Solution for Device Mobility Enhancement

Babuji

Temiño

et al. 2022

Adv Materials Technologies

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“…While the charge transport in a polycrystalline film with randomly oriented domains will be isotropic, in a film with aligned crystallites, transport anisotropy will be expected accordingly to the molecular crystal packing. 23–28 The crystal arrangement and the morphology of organic semiconductor thin films have been found to be dependent on the substrate, 6,29 solvent and solution concentration, 30 temperature 31 and coating deposition parameters. 9,23,32–34 …”

Section: Introductionmentioning

confidence: 99%

Mobility anisotropy in the herringbone structure of asymmetric Ph-BTBT-10 in solution sheared thin film transistors

et al. 2021

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“…In both derivatives, hole mobility was low and device fabrication was hampered by poor solubility. Optimisation of fabrication conditions may yet yield consistently high performing devices from these materials which may need drastically different approaches, for example blending with binder polymers, 27 to overcome their low solubilities. While the use of an all-carbon functional group allows for a much wider array of structural modifications to be explored, the beneficial properties of the silicon atom (higher electron density, weak electron-withdrawing characteristics, and length and flexibility of the C–Si bond) may outweigh the synthetic advantages.…”

Section: Discussionmentioning

confidence: 99%

Crystal engineering of alkylethynyl fluoroanthradithiophenes

Thorley

Dremann

Iqbal

et al. 2022

Mol. Syst. Des. Eng.

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Influence of polymer binder on the performance of diF-TES-ADT based organic field effect transistor

Abstract: The presented work concerns the study of solution sheared organic thin film transistors based on a 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene (diF-TES-ADT) polymer blend.

Cited by 11 publications

References 35 publications

Chemical Doping of the Organic Semiconductor C8‐BTBT‐C8 Using an Aqueous Iodine Solution for Device Mobility Enhancement

Chemical Doping of the Organic Semiconductor C8‐BTBT‐C8 Using an Aqueous Iodine Solution for Device Mobility Enhancement

Mobility anisotropy in the herringbone structure of asymmetric Ph-BTBT-10 in solution sheared thin film transistors

Crystal engineering of alkylethynyl fluoroanthradithiophenes

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