Influence of polarized bias and porous silicon morphology on the electrical behavior of Au-porous silicon contacts

Abstract

This paper reports the surface morphology and I-V curves of porous silicon (PS) samples and related devices. The observed fabrics on the PS surface were found to affect the electrical property of PS devices. When the devices were operated under different external bias (10 V or 3 V) for 10 min, their observed obvious differences in electrical properties may be due to the different control mechanisms in the Al/PS interface and PS matrix morphology.

Luminescence and photoconductivity properties of porous polycrystalline silicon

“…1b) which is made from the remaining polycrystalline silicon drilled by macro-pores located at the grain boundaries. This is inconsistent with previous articles which reported that pores selectively propagated in the h1 0 0i crystallographic directions [11,12].…”

EFFECT OF ETCHING TIME ON THE CHARACTERISTICS OF LOW RESISTIVITY POROUSSiDEVICES

“…This may be due to decrease of the polarization ability and the corresponding dielectric constant. 16 The forward current for the 5 min etched diode was larger than other diodes made at longer etching time. This is due to the lower resistance of porous layer synthesized for 5 min etching time as compared to others etched at longer times.…”

Optoelectronic properties of ZnO/PS/n-Si Heterojunctions

“…Figure (2) shows the FTIR spectra of p-type porous silicon prepared by electrochemical etching, the peaks between 3000 to 3650 cm -1 is the SiO-H stretching vibration; while a peak at ~ 2000 cm -1 , 2100 cm -1 and 2200cm -1 is related to Si-H 2 and Si-H respectively. The band between 1000 to 1250 cm -1 is the Si-O-Si stretching vibration.…”

“…Formation of stable rectifying junctions with porous silicon (PS) [1] with good forward reverse characteristics is one of the most challenging problems for proper exploitation of the material in the device industry. Vacuum deposited Au [2] and Al [3], sputter -coated indium tin oxides [4] and conducting polymers [5] have been used with limited success for fabricating light -emitting diodes and photo detectors, we have recently shown that deposition of SnO 2 : Sb: Tb3 + on PS from an aqueous solution gives significantly better rectifying or Ohmic contacts due to the filling of pores by the deposited material [6]. Deposition of a film by a similar technique which is both electrically conducting and optically transparent could be lead to the fabrication of improved PS based photodiodes and electroluminescent devices.…”