Influence of polar face on optical properties of staggered 440 nm InGaN/InGaN/GaN quantum-well light-emitting diodes

Park, S.-H.; Kim, B.-H.; Ahn, Doyeol; Lee, Y.-T.

doi:10.1109/nusod.2010.5595649

Numerical Simulation of Optoelectronic Devices 2010

DOI: 10.1109/nusod.2010.5595649

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Influence of polar face on optical properties of staggered 440 nm InGaN/InGaN/GaN quantum-well light-emitting diodes

S.-H. Park

B.-H. Kim

Doyeol Ahn

et al.

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Influence of polar face on optical properties of staggered 440 nm InGaN/InGaN/GaN quantum-well light-emitting diodes

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References 6 publications

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