Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition

Device Performance and Reliability Improvements of AlGaBN/GaN/Si MOSFET

“…There is no evidence of detectable Ga-ON (~ 398 eV) or N-O (~ 402 eV) bonding, which results in undesirable defects on AlGaN according to our previous in situ O2 plasma pretreatment work. 12 The N 1s/Ga LMM ratio decreases slightly after 20 cycles of Al2O3 because of a formation of surface Ga/Al oxide, and will be further discussed in the Ga 2p3/2 and Al 2p spectra below. 14, 31 In order to observe the initial reaction between the AlGaN surface and TMA/O2 plasma, the C 1s spectra for the first two full ALD cycles (four half cycles) are also shown in Fig.…”

“…33 The diode fabrication flow for C-V measurements has been described previously. 12,18 For the transistor fabrication, a mesa isolation using 500 s BCl3 (15 sccm)/Ar (5 sccm) reactive ion etching (RIE) was first processed. The etching depth was ~ 150 nm.…”

“…[5][6][7] In the past decade, much work has been done to study the device performance, as well as the interface chemistry for Al2O3/AlGaN/GaN MISHEMTs. 5,6,[8][9][10][11][12][13][14][15][16][17] Although an ALD Al2O3 insulator layer grown by Tri-Methyl-Aluminum (TMA) and H2O precursors decreases the leakage current significantly, the ALD Al2O3 is not effective in the passivation of the native AlGaN surface or reduction of the interface state density (Dit). 5,12,18 Moreover, due to a high density of positive charges at the AlGaN surface, an undesirable negative threshold voltage shift appears after the ALD Al2O3.…”

“…5,6,[8][9][10][11][12][13][14][15][16][17] Although an ALD Al2O3 insulator layer grown by Tri-Methyl-Aluminum (TMA) and H2O precursors decreases the leakage current significantly, the ALD Al2O3 is not effective in the passivation of the native AlGaN surface or reduction of the interface state density (Dit). 5,12,18 Moreover, due to a high density of positive charges at the AlGaN surface, an undesirable negative threshold voltage shift appears after the ALD Al2O3. 6 Recently, numerous reports support that the oxidation of AlGaN can decrease the positive interface charges as well as the…”

Low‐temperature hollow cathode plasma‐assisted atomic layer deposition of crystalline III‐nitride thin films and nanostructures

“…Although thermal ALD (or atomic layer epitaxy, ALE) of III-nitride thin films, especially AlN, using various types of group-III precursors has been the focus of interest in the 1990s, current trend in the field of III-nitride ALD research is directed towards UV-, hot-wire-or plasmaassisted processes using metalorganic precursors [1][2][3][4][5][6][7][8][9][10][11]. Recently, we showed that ALD-grown III-nitride thin films may suffer from plasma-related oxygen contamination depending on the choice of N-containing plasma gas (N 2 , N 2 /H 2 or NH 3 ) [12,13].…”