Abstract:The introduction of Extreme Ultraviolet Lithography (EUVL) has been an extraordinary achievement in keeping Moore's law alive, as it minimizes the cost, time, and number of patterning steps required for device fabrication. However, as the advanced technology nodes require further scale down of the semiconductor devices, the current state-of-art EUVL tool, equipped with 0.33 Numerical Aperture (NA) and 13.5nm wavelength cannot print the features of interest with an acceptable yield. As a solution, a new generat… Show more
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