Influence of oxygen on light emission from amorphous silicon nanoclusters

Abstract

Surface effects, in particular oxygen passivation, are known to have drastic influence on emission spectra of semiconductor nanoclusters. The goal of this work was to obtain light emission from amorphous silicon nanoclusters by means of oxygen passivation. Granulated films of amorphous silicon nanoclusters were fabricated by the laser electrodispersion technique, which allows obtaining nanoclusters of uniform sizes. Two methods were applied in order to incorporate oxygen into the films, and both result in improvement of the luminescent properties of the films. The role of oxygen passivation as well as the effect of thermal annealing is considered. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Транспорт и фоточувствительность в структурах: композитный слой из наночастиц кремния и золота на p-Si

“…Край погло-щения слоя наночастиц кремния сдвинут в коротко-волновую область по отношению к краю поглощения монокристаллического кремния [13], что позволяет свя-зать коротковолновый максимум с генерацией фотоно-сителей заряда в слое наночастиц. Длинноволновый же максимум можно отнести к генерации носителей заряда в кремниевой подложке, так как и его положение, и сдвиг при понижении температуры примерно соответ-ствуют величине и изменению с температурой ширины запрещeнной зоны объeмного кремния.…”

Red Light Emission from Silicon Created by Self-Ion Implantation and Thermal Annealing

“…The origin of the β peak (~ 2.07 eV) is the quantum dots with the diameter of 2 nm which was theoretical studied by Nishio et al [14]. However, another viewpoint was proposed by Yeltsina et al They demonstrated that the luminescence of Si NCs in silicon oxide shells is also located at ~ 2.07 eV [15]. In our experiment, the β peak experiences a redshift of about 0.06 eV as annealing temperature increasing from 800 ºC to 950 ºC.…”