Influence of Oxygen Concentration on Self-Compliance RRAM in Indium Oxide Film

Abstract

This letter investigates various oxygen concentrations in indium oxide films which induce different resistance switching behaviors, including two self-compliance behaviors and a two-step set process. The accumulated oxygen ions produce an oxygen-rich indium oxide film, which can be considered as a variable series resistor after the forming process. Analyses indicate that the lower self-compliance current can be attributed to this larger variable series resistor from the additional oxygen ions. The more significant oxidation reaction decreases the current of the high resistance state. Hence, power consumption can be reduced effectively.

Comparative study of Al2O3, HfO2, and HfAlOx for improved self‐compliance bipolar resistive switching

“…All devices show repeatable self-compliance switching behavior more than one order of magnitude (>109) during the first 100 cycles. 28,29 In Figure 1C, the EDS analysis and Table 1 support the higher oxygen O À2 content at the Ti/oxide interface to be in case of HfAlO x thin films compared to others. To say more, the HfAlO x -based device shows clear higher resistance in the low resistance state (LRS), compared to other devices and can be programmed at lower read/write current.…”

“…In addition, higher oxygen O À2 content at the Ti/oxide interface can also result in resistance lowering of LRS. 28,29 In Figure 1C, the EDS analysis and Table 1 support the higher oxygen O À2 content at the Ti/oxide interface to be in case of HfAlO x thin films compared to others. It is known that competitive bonds appear in HfAlO x thin films due to Al-O (1.93 A) and Hf-O (2.16 A) bond length difference and due to that thin film becomes denser than binary HfO 2 thin film.…”

Influence of Nitrogen Concentration on Self‐Compliance Resistive Switching in Ta/SiNx/Pt RRAM Devices

“…The nitrogen‐rich SiN x layer at the Ta/SiN x interface as shown in Figure c is a series resistor that prevents the formation of a continuous filament. This interface resistor and the dendric Si‐DB conductive channel cause the self‐compliance behavior in all the samples …”

Multibit, Lead‐Free Cs2SnI6 Resistive Random Access Memory with Self‐Compliance for Improved Accuracy in Binary Neural Network Application

“…These include the thickness of the material, [15] non-stoichiometric chemical composition, notably oxygen concentration, [16] defect concentration (like oxygen vacancies), [14,15] intrinsic defects, the strategic control over 1D or spatially restricted conducting filament growth seen in materials like CuO and ZnO nanowires, [14,17] physical parameters such as the dielectric constant [15] and thermal conductivity, [33] the presence of a metallic phase or the doping with metal ions, [17] and various process parameters. [14] Such process parameters include annealing temperature and atmosphere, [16] the material and thickness of the top electrode, [34,35] the area of the top electrode pad, [36] bilayer device configuration, and controlled joule heating. Additionally, the formation of an interfacial layer at the interface of the top electrode and RS layer has also been understood to be a significant factor.…”

“…Herein, the origin of self-compliance in CSI RRAM materials is comprehensively investigated and compared with several reported conventional materials, [14,15] including metal oxides [16] and others. [14,15,17] In addition, the low variation of the low resistance state (LRS) for CSI RRAM, stemming from the selfcompliance effects, is experimentally highlighted.…”