Influence of off-cut angle of r-plane sapphire on the crystal quality of nonpolar a-plane AlN by LP-HVPE

Wu, Jerry J.; Okuura, Kazukeru; Fujita, Kazuue; Okumura, Kenta; Miyake, Hideto; Hiramatsu, Kazumasa

doi:10.1016/j.jcrysgro.2009.08.009

Cited by 23 publications

(19 citation statements)

References 22 publications

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“…In the case of the GaN template (squares), the full width at half maximum (FWHM) is maximum (2860 arcsec) when the o scan is performed along the [1 1 À 2 3] direction, and minimum (1530 arcsec) towards the [1 À1 0 0] direction. This azimuthal dependence is frequently observed in non-and semipolar GaN grown on foreign substrates [17,18], while it is inexistent for non-polar GaN sliced from [0 0 0 1]-oriented GaN boules, which exhibits only few defects. This variation outlines the crystallographic defect in-plane anisotropy of our semipolar GaN template.…”

Section: Xrdmentioning

confidence: 89%

Stacking faults blocking process in (11−22) semipolar GaN growth on sapphire using asymmetric lateral epitaxy

Kriouche

Vennéguès

Némoz

et al. 2010

Journal of Crystal Growth

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Section: Xrdmentioning

confidence: 89%

Stacking faults blocking process in (11−22) semipolar GaN growth on sapphire using asymmetric lateral epitaxy

Kriouche

Vennéguès

Némoz

et al. 2010

Journal of Crystal Growth

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“…All the films in the study were around 1 μm thick and grown on single‐side polished 100 mm diameter r ‐plane sapphire (Al 2 O 3 (

1 \overset{false¯}{1} 02

)) substrates with +1° to +4° offcut angles. The offcut direction has been defined based on J. Wu et al [ 41 ] Individual Al (99.999% pure) and Sc (99.99% pure) sputter targets were used and the applied power was set to P Al of 616 W and P Sc of 384 W to achieve Al 0.7 Sc 0.3 N composition. The targets were presputtered with target shutter closed in argon for 5 min before deposition.…”

Section: Methodsmentioning

confidence: 99%

Growth Optimization of Nonpolar Al_0.7Sc_0.3N(112¯0)/Al₂O₃(11¯02) Thin Films Using Reactive Magnetron Sputter Epitaxy

Nair

Kessel

Kirste

et al. 2022

Physica Status Solidi (a)

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A‐plane Al0.7Sc0.3N ( 11 2 false¯ 0 ) thin films are grown on r‐plane Al2O3( 1 1 false¯ 02 ) substrates using reactive pulsed‐DC magnetron sputter epitaxy. This is the first report of successful synthesis of nonpolar epitaxial AlScN films with a high scandium concentration (30%). The influence of different sputtering conditions, such as magnetron power, temperature, and process gas flow rates, is investigated. The film characteristics are also compared on different substrate offcuts. Controlling the diffusion of adatoms on surface of the substrate is found to have the highest influence on film quality. The X‐ray diffraction measurements confirm in‐plane oriented AlScN ( 11 2 false¯ 0 ) layers and the final optimized films show significant improvement in rocking curve full width at half maximum (ω‐FWHM) of 11 2 false¯ 0 reflection. Corresponding atomic force microscopy (AFM) measurements show mean root square surface roughness (R q < 0.4 nm) nearing atomically smooth levels. The optimized films also exhibit anisotropic growth characteristics. A growth model for a‐plane AlScN has been proposed based on the growth parameters of the film.

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“…Figure (c) shows the definition of the off‐cut angle used in this study. AlN and GaN growth on an r ‐plane sapphire substrate with an off‐cut direction toward [0001] has been previously reported; however, AlN growth on an r ‐plane sapphire substrate with an off‐cut direction toward [11‐20] as shown in Figure (c), has not been previously reported. The experimental details for thermal nitridation have been described in previous papers .…”

Section: Methodsmentioning

confidence: 99%

“…Therefore, a ‐plane AlN growth on r ‐plane sapphire is an important technology to realize high‐efficiency DUV‐LEDs. Some groups have grown a ‐plane AlN layers on r ‐plane sapphire substrates by metal–organic chemical vapor deposition and HVPE …”

Section: Introductionmentioning

confidence: 99%

Non‐Polar a‐Plane AlN Growth on Nitrided r‐Plane Sapphire by Ga–Al Liquid‐Phase Epitaxy

Adachi

Fukuyama

2017

Physica Status Solidi (b)

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Growth of non‐polar AlN layers is important to realize high‐efficiency deep‐ultraviolet light‐emitting diodes. In this study, a‐plane AlN layers are fabricated by a combination of thermal nitridation and Ga–Al liquid‐phase epitaxy (LPE). Thermal nitridation at 1603 and 1623 K provides a‐plane AlN thin films with smooth surfaces on r‐plane sapphire substrates. However, these AlN films contain a double domain structure. Nitridation of r‐plane sapphire with an off‐cut angle can effectively eliminate the double domain structure. Moreover, a‐plane AlN films are grown homoepitaxially on the nitrided r‐plane sapphire substrates by Ga–Al LPE. Thus, a single‐domain non‐polar AlN film is successfully grown on nitrided r‐plane sapphire with an off‐cut angle.

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Influence of off-cut angle of r-plane sapphire on the crystal quality of nonpolar a-plane AlN by LP-HVPE

Cited by 23 publications

References 22 publications

Stacking faults blocking process in (11−22) semipolar GaN growth on sapphire using asymmetric lateral epitaxy

Stacking faults blocking process in (11−22) semipolar GaN growth on sapphire using asymmetric lateral epitaxy

Growth Optimization of Nonpolar Al_0.7Sc_0.3N(112¯0)/Al₂O₃(11¯02) Thin Films Using Reactive Magnetron Sputter Epitaxy

Non‐Polar a‐Plane AlN Growth on Nitrided r‐Plane Sapphire by Ga–Al Liquid‐Phase Epitaxy

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Influence of off-cut angle of r-plane sapphire on the crystal quality of nonpolar a-plane AlN by LP-HVPE

Cited by 23 publications

References 22 publications

Stacking faults blocking process in (11−22) semipolar GaN growth on sapphire using asymmetric lateral epitaxy

Stacking faults blocking process in (11−22) semipolar GaN growth on sapphire using asymmetric lateral epitaxy

Growth Optimization of Nonpolar Al0.7Sc0.3N(112¯0)/Al2O3(11¯02) Thin Films Using Reactive Magnetron Sputter Epitaxy

Non‐Polar a‐Plane AlN Growth on Nitrided r‐Plane Sapphire by Ga–Al Liquid‐Phase Epitaxy

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Growth Optimization of Nonpolar Al_0.7Sc_0.3N(112¯0)/Al₂O₃(11¯02) Thin Films Using Reactive Magnetron Sputter Epitaxy