Influence of nonlocality on amplification of space charge waves in n-GaN films

Grimalsky, V.; Koshevaya, S.; Moroz, I.; García-Barrientos, Abel

doi:10.1109/msmw.2010.5546135

Cited by 6 publications

(4 citation statements)

References 16 publications

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“…The dependencies of the relaxation frequencies were computed from Eqs. (1) in the stationary case /t = 0 [1,[15][16][17][18][19]; the dependencies in Fig. 2, a), b), were used.. Their computed values are p 2•10 13 s -1 for both nitrides; w  10 12 s -1 for InN, w  10 13 s -1 for GaN [15].…”

Section: Basic Equationsmentioning

confidence: 99%

“…The simplest model of the taking account of the non-local dependence of the drift velocity v is applied here, to estimate the influence of the nonlocality. The characteristic time of nonlocality was calculated in [16,17], it is of about 4/(3w(w)). In Eqs.…”

Section: Basic Equationsmentioning

confidence: 99%

“…In the case when the bias electric field E00 is essentially higher than the critical one and corresponds to the maximum of NDC, the initial strong amplification at the linear stage occurs. But then the amplified pulse deforms at the nonlinear stage of amplification and as a result several powerful oscillations are formed at the output [17]. Therefore, to create stable nonlinear monopulses, the bias electric field should be chosen slightly above the threshold of NDC.…”

Section: Excitation Of Sequences Of Nonlinear Monopulsesmentioning

confidence: 99%

“…The linear amplification of SCW in n-GaN and n-InN films was investigated in the frequency range f < 800 GHz, where the non-local dependence of the electron velocity on the average electron energy was taken into account [15][16][17]. The typical thicknesses of the films were 2l = 0.2 -1 m, their lengths were 10 -50 m, see Fig.…”

Section: Introductionmentioning

confidence: 99%

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Generation of sequences of strong electric monopulses in nitride films

et al. 2021

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This paper presents theoretical investigation of the excitation of the sequences of strong nonlinear monopulses of space charge waves from input small envelope pulses with microwave carrier frequencies due to the negative differential conductivity in n-GaN and n-InN films. The stable numerical algorithms have been used for nonlinear 3D simulations. The sequences of the monopulses of the strong electric field of 3 - 10 ps durations each can be excited. The bias electric field should be chosen slightly higher than the threshold values for observing the negative differential conductivity. The doping levels should be moderate 1016 -1017 cm-3in the films of ? 2 mm thicknesses. The input microwave carrier frequencies of the exciting pulses of small amplitudes are up to 30 GHz in n-GaN films, whereas in n-InN films they are lower, up to 20 GHz. The sequences of the electric monopulses of high peak values are excited both in the uniform nitride films and in films with non-uniform conductivity. These nonlinear monopulses in the films differ from the domains of strong electric fields in the bulk semiconductors. In the films with non-uniform doping the nonlinear pulses are excited due to the inhomogeneity of the electric field near the input end of the film and the output nonlinear pulses are rather domains.

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