Influence of non-radiative carrier losses on pulsed and continuous VECSEL performance

Laurain, Alexandre; Hader, J.; Lai, Yi Ying; Wang, Tsuei Lian; Yarborough, Mike; Balakrishnan, Ganesh; Rotter, Thomas; Ahirwar, P.; Moloney, Jerome V.

doi:10.1117/12.909412

Cited by 8 publications

(10 citation statements)

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“…Some suggested that non-radiative Auger recombination is the most detrimental mechanism which limits the performance of the low band-gap longwavelength semiconductor lasers. [19][20][21][22] On the other hand, Shterengas et al 23,24 and Rain o et al 25 reported that thermally induced hole escape is the main non-radiative process which deteriorates the optical properties and performances of the GaSb-based devices at elevated temperature.…”

Section: Introductionmentioning

confidence: 99%

Carrier dynamics and photoluminescence quenching mechanism of strained InGaSb/AlGaSb quantum wells

Jahan

Hermannstädter

Sasakura

et al. 2013

Journal of Applied Physics

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GaSb based quantum wells (QWs) show promising optical properties in near-infrared spectral range. In this paper, we present photoluminescence (PL) spectroscopies of In x Ga 1Àx Sb/Al y Ga 1Ày Sb QWs and discuss the possible thermal quenching and non-radiative carrier recombination mechanisms of the QW structures. The In and Al concentrations as well as the QW thicknesses were precisely determined with the X-ray diffraction measurements. Temperature dependent time-integrated and time-resolved PL spectroscopies resulted in the thermal activation energies of $45 meV, and the overall self-consistent calculation of the band parameters based on the measured physical values confirmed that the activation energies are due to the hole escape from the QW to the barriers. The relation of the present single carrier escape mechanism with the other escape mechanisms reported with other material systems was discussed based on the estimated band offset. The relation of the present thermal hole escape to the Auger recombination was also discussed. V C 2013 American Institute of Physics. [http://dx

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Section: Introductionmentioning

confidence: 99%

Carrier dynamics and photoluminescence quenching mechanism of strained InGaSb/AlGaSb quantum wells

Jahan

Hermannstädter

Sasakura

et al. 2013

Journal of Applied Physics

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“…Figures 7 and 8 shows edge/surface PL spectra from a VECSEL sample. The edge-PL shifts to longer wavelength at about 1.6nm/K [14], this is primarily due to the bandgap energy temperature dependence. The sub cavity resonance also shifts to longer wavelength with increasing temperature, but more slowly when compared to intrinsic gain-peak shift; at about 0.26nm/K.…”

Section: Vecsel Growth Optimizationmentioning

confidence: 96%

“…The PL spectrum measured normal to the wafer surface is strongly modulated due to the sub cavity etalon and the DBR. The edge-PL spectrum shows significantly weaker modulation and is therefore used to determine the QW emission's spectral peak position [1,4,14]. The VECSEL sample is mounted on a heat sink to measure the edge/surface PL spectrum at different heat-sink temperatures.…”

Section: Vecsel Growth Optimizationmentioning

confidence: 99%

“…Thus it is evident from the relationship between carrier lifetime and dislocation density that the higher TDD found in the III-Sb on GaAs/AlGaAs DBRs is detrimental to performance of a VECSEL device. [14] Furthermore this high TDD in the III-Sb on GaAs/AlGaAs can also be linked to the high threshold density, lower efficiency and reduced maximum output power compared to a lattice matched IIISb laser. …”

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confidence: 99%

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Growth and Optimization of 2-μm InGaSb/AlGaSb Quantum-Well-Based VECSELs on GaAs/AlGaAs DBRs

Ahirwar

Rotter

Shima

et al. 2013

IEEE J. Select. Topics Quantum Electron.

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Abstract-We report the growth of optically pumped vertical external cavity surface emitting lasers (VECSELs) based on InGaSb/AlGaSb quantum wells grown on GaAs/AlGaAs distributed Bragg reflectors (DBRs), which are in turn grown on GaAs substrates. We attempt to mitigate the effects of the 7.78% lattice mismatch that exists between GaSb and GaAs by introducing an interfacial layer of 90º misfit dislocations (IMF) at the mismatched interface. This results in the spontaneous relaxation of the GaSb epi-layer and significantly reduces threading dislocation density. The IMF interface is optimized through the use of an antimony soak layer, which results in a distinct (2 x 8) Sb reconstructed surface on GaAs. The III-Sb VECSEL active region is optimized for various parameters including quantum well quality and the thickness of the individual layers. The VECSELs are optically pumped using both pulsed sources for sub-thermal measurements and continuous wave (CW) sources. The pulsed measurements have resulted in record results of 340 W peak power while the CW measurements have resulted in a maximum output power of 0.12 W, with both lasers emitting at 2 µm. We investigate the effects of the mismatched interface by comparing the III-Sb VECSEL grown on GaAs/AlGaAs DBRs to a lattice matched III-Sb VECSEL grown on GaSb/AlAsSb DBRs. The results indicate deterioration in the lattice-mismatched laser's performance compared to the lattice-matched laser's performance in terms of threshold pump density, efficiency and maximum CW output power. Further comparison of the structures using cross-section transmission electron microscopy also confirms the presence of threading dislocations in the III-Sb active region grown on GaAs/AlGaAs DBRs. The ability to use such mismatched active regions will therefore depend on the stability and reproducibility of the IMF interface. The optical properties of the III-SB active regions grown on the GaAs substrates using IMF technique are investigated using time-resolved photoluminescence with the objective of using this technique to optimize the IMF interface in future studies.Index Terms-Semiconductor lasers, Quantum well lasers, Surface-emitting lasers.I. INTRODUCTION he two-micron vertical external cavity surface emitting laser has applications in a variety of technologies from gas sensing to infrared counter measures. The use of antimonide semiconductors for lasers in the 1.8 -3.3 µm wavelength range is well established with a majority of such lasers fabricated as edge emitting diodes including distributed feedback (DFB) lasers.[1] However, the high beam quality and high output power of the VECSEL could be of considerable advantage to the antimonide lasers in this wavelength range.The power scaling in a VECSEL is achieved by increasing the diameter of the pump spot while keeping the pump density constant. The quantum well VECSELs based on InGaAs quantum wells grown on GaAs substrates have recently broken the 100 Watt barriers for CW output power from a single chip. [2] However, the same level of suc...

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“…These dislocation lines are to be avoided since they are centers of non radiative recombination and drastically reduce the carriers' lifetime and efficiency of the device. 5 Since most QWs are not lattice matched to the host substrate, this limits the minimum spacing between them and the maximum number that can be stacked around an antinode, and is increasingly challenging with heavily strained wells, i.e at longer wavelengths for InGaAs QWs.…”

Section: Gain Structure Design Strategymentioning

confidence: 99%

Structure and cavity geometry optimization for ultrashort and high power pulse generation from a VECSEL

Laurain

Rockmore

Baker

et al. 2018

Vertical External Cavity Surface Emitting Lasers (VECSELs) VIII

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Influence of non-radiative carrier losses on pulsed and continuous VECSEL performance

Cited by 8 publications

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Carrier dynamics and photoluminescence quenching mechanism of strained InGaSb/AlGaSb quantum wells

Carrier dynamics and photoluminescence quenching mechanism of strained InGaSb/AlGaSb quantum wells

Growth and Optimization of 2-μm InGaSb/AlGaSb Quantum-Well-Based VECSELs on GaAs/AlGaAs DBRs

Structure and cavity geometry optimization for ultrashort and high power pulse generation from a VECSEL

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