Influence of negative ion resputtering on Al-doped ZnO thin films prepared by mid-frequency magnetron sputtering

Cai, Yuanqiang; Liu, Wei; He, Qiang; Yu, Ting; Sun, Yun

doi:10.1016/j.apsusc.2009.09.096

Cited by 35 publications

(13 citation statements)

References 30 publications

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“…6(a), we note that the global Al content increases and the Zn content decreases in the low pressure regime. In fact, resputtering effects in AZO films have been shown in previous work to be associated to preferential removal of Zn from the growing film [29]. As previously observed from Fig.…”

Section: Elemental Compositionsupporting

confidence: 75%

“…While resistivity maxima at x e are most often reported [9,11,12,7,8,29], resistivity minima at x e [13] and resistivity maxima at x 0 were also observed [9,11,12,10]. In some cases [9,11,12], the resistivity maximum at x 0 was shown to occur only when an old, eroded target was used (roughly, for an erosion track deeper than 1 mm).…”

Section: Comparison With Our Resultsmentioning

confidence: 98%

“…4), we conclude that our AZO film is partially resputtered by energetic particle bombardment in the low-pressure regime. Previous studies have shown that not only can resputtering effects exist in AZO, but they can also be spatially distributed: the regions of the film where a higher flux density of energetic ions is expected may have a higher resputtering rate [28,29]. By inspection of the radial distribution of deposition rate in our films (Fig.…”

Section: Deposition Ratementioning

confidence: 99%

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On performance limitations and property correlations of Al-doped ZnO deposited by radio-frequency sputtering

Crovetto¹,

Ottsen²,

Stamate³

et al. 2016

J. Phys. D: Appl. Phys.

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Abstract. The electrical properties of RF-sputtered Al-doped ZnO are often spatially inhomogeneous and strongly dependent on deposition parameters. In this work, we study the mechanisms that limit the minimum resistivity achievable under different deposition regimes. In a low-and intermediate pressure regime, we find a generalized dependence of the electrical properties, grain size, texture, and Al content on compressive stress, regardless of sputtering pressure or position on the substrate. In a high-pressure regime, a porous microstructure limits the achievable resistivity and causes it to increase over time as well. The primary cause of inhomogeneity in the electrical properties is identified as energetic particle bombardment. Inhomogeneity in oxygen content is also observed, but its effect on the electrical properties is small and limited to the carrier mobility.

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Section: Elemental Compositionsupporting

confidence: 75%

Section: Comparison With Our Resultsmentioning

confidence: 98%

Section: Deposition Ratementioning

confidence: 99%

See 1 more Smart Citation

On performance limitations and property correlations of Al-doped ZnO deposited by radio-frequency sputtering

Crovetto¹,

Ottsen²,

Stamate³

et al. 2016

J. Phys. D: Appl. Phys.

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show abstract

“…Wide bandgap semiconductors were usually chosen as host materials due to their good transparency, high carrier mobilities, and easy processing. Furthermore, appropriate alivalent ions also should be doped in the host materials so as to introduce numbers of free charge carriers, such as Sn doped In 2 O 3 (ITO) [4], Al or Ga-doped ZnO [5,6], Ta or Sbdoped SnO 2 [7,8], and La doped SrTiO 3 [9]. Among them, ITO is the most commonly used TCO, which presents a low resistivitỹ 10 À4 U cm and high transparency of more than 90% [10].…”

Section: Introductionmentioning

confidence: 99%

High electrical conductivity in oxygen deficient BaSnO3 films

Liu

Dai

Zhang

et al. 2016

Journal of Alloys and Compounds

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“…In particular, the local electrical resistivity is found to vary by more than one order of magnitude (see e.g. [2,3]). surprisingly, the resistivity does not have a single maximum or minimum in the centre as would be expected from neutral or positive ions flux.…”

Section: Introductionmentioning

confidence: 98%

Negative ions in reactive magnetron sputtering

Welzel

Ellmer

2013

Vak Forsch Prax

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Negative ions are present in magnetron sputtering if electronegative elements are involved. The majority of the negative ions impinging on transparent conductive oxide (TCO) films during growth is O -produced at the oxidised target surface while it is rather unimportant whether it is bulk oxide or a surface oxide formed in reactive sputtering. O -bombards the film with energies equivalent to the target voltage and by far exceed 100 eV. It is hence apt to cause radiation damage in sensitive TCO films. This is shown by the lateral distribution of the highenergy O -flux in planar magnetron sputtering that exhibits the same pattern imaging the erosion groove as the resistivity of TCO films. This lateral inhomogeneity strongly depends on the erosion groove depth. The emission of O -further depends on the sputtered material, for TiO 2 deposition it is much less than for other TCO materials. The emission probability correlates to the secondary electron emission coefficient of the oxide.

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Influence of negative ion resputtering on Al-doped ZnO thin films prepared by mid-frequency magnetron sputtering

Cited by 35 publications

References 30 publications

On performance limitations and property correlations of Al-doped ZnO deposited by radio-frequency sputtering

On performance limitations and property correlations of Al-doped ZnO deposited by radio-frequency sputtering

High electrical conductivity in oxygen deficient BaSnO3 films

Negative ions in reactive magnetron sputtering

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