Influence of multi-hit capability on quantitative measurement of NiPtSi thin film with laser-assisted atom probe tomography

Kinno, T.; Akutsu, Haruko; Tomita, Mitsuhiro; Kawanaka, S.; Sonehara, T.; Hokazono, A.; Renaud, L; Martin, Isabelle; Benbalagh, Rabah; Sallé, B.; Takeno, Shiro

doi:10.1016/j.apsusc.2012.07.108

Cited by 15 publications

(14 citation statements)

References 14 publications

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“…Furthermore, since some elements are more prone to field evaporate in multi-hit events [9,[11][12][13][14][15], a similar filtering scheme can be used to enhance detection sensitivity for these elements.…”

Section: Multi-hit Eventsmentioning

confidence: 99%

“…The effect of signal loss for a particular species is loss of accuracy in measured elemental concentrations and isotopic abundances [13][14][15][16][17][18].…”

Section: Multi-hit Eventsmentioning

confidence: 99%

“…However, some elements, such as boron (B), tend to field evaporate preferentially in multi-hit detection events, during APT [10][11][12]. The limited ability of the atom probe detector to resolve multi-hit events, also known as ion pile-up, has been identified as a mechanism through which preferential loss of signal for an elemental species can occur, thereby causing inaccurate measurement of concentration and isotopic abundance [13][14][15][16][17][18]. Boron is an important p-type dopant used in the fabrication of microelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

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Effects of detector dead-time on quantitative analyses involving boron and multi-hit detection events in atom probe tomography

et al. 2015

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In atom probe tomography (APT), some elements tend to field evaporate preferentially in multi-hit detection events. Boron (B) is one such element. It is thought that a large fraction of the B signal may be lost during data acquisition and is not reported in the mass spectrum or in the 3-D APT reconstruction. Understanding the relationship between the field evaporation behavior of B and the limitations for detecting multi-hit events can provide insight into the signal loss mechanism for B and may suggest ways to improve B detection accuracy. The present work reports data for nominally pure B and for B-implanted silicon (Si) (NIST-SRM2137) at dose levels two-orders of magnitude lower than previously studied by Da Costa, et al. in 2012. Boron concentration profiles collected from SRM2137 specimens qualitatively confirmed a signal loss mechanism is at work in laser pulsed atom probe measurements of B in Si. Ion correlation analysis was used to graphically demonstrate that the detector dead-time results in few same isotope, same charge-state (SISCS) ion pairs being properly recorded in the multi-hit data, explaining why B is consistently under-represented in quantitative analyses. Given the important role of detector dead-time as a signal loss mechanism, the results from three different methods of estimating the detector dead-time are presented. The findings of this study apply to all quantitative analyses that involve multi-hit data, but the dead-time will have the greatest effect on the elements that have a significant quantity of ions detected in multi-hit events.

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Section: Multi-hit Eventsmentioning

confidence: 99%

“…The effect of signal loss for a particular species is loss of accuracy in measured elemental concentrations and isotopic abundances [13][14][15][16][17][18].…”

Section: Multi-hit Eventsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Effects of detector dead-time on quantitative analyses involving boron and multi-hit detection events in atom probe tomography

et al. 2015

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“…The detection efficiency is usually 30-60%, depending on instrument type, and it is the same for all elements, thus giving excellent compositional accuracy, without the need of standard samples and element specific calibration. In some cases, though, the accuracy of concentration measurements is significantly reduced, for example when analyzing carbides [1], nitrides [2], silicides [3] or semiconductors [4]. In the case of carbides, the main reason why the obtained carbon concentration is usually too low is the limited capability of the detector to register all ions resulting from the same pulse.…”

Section: Introductionmentioning

confidence: 99%

Reduction of multiple hits in atom probe tomography

et al. 2013

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The accuracy of compositional measurements using atom probe tomography is often reduced because some ions are not recorded when several ions hit the detector in close proximity to each other and within a very short time span. In some cases, for example in analysis of carbides, the multiple hits result in a preferential loss of certain elements, namely those elements that frequently field evaporate in bursts or as dissociating molecules. In this paper a method of reducing the effect of multiple hits is explored. A fine metal grid was mounted a few millimeters behind the local electrode, effectively functioning as a filter. This resulted in a decrease in the overall detection efficiency, from 37% to about 5%, but also in a decrease in the fraction of multiple hits. In an analysis of tungsten carbide the fraction of ions originating from multiple hits decreased from 46% to 10%. As a result, the measured carbon concentration increased from 48.2 at.% to 49.8 at.%, very close to the expected 50.0 at.%. The characteristics of the multiple hits were compared for analyses with and without the grid filter.

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“…The three main considerations for better analytical results are molecular ions, multiple events, and peak overlap. These issues often occur during carbide , nitride (Tang et al, 2010), silicide (Kinno et al, 2012) analysis compared to metallic materials since the evaporation of molecular ions and multiple events where more than one ion originating from the same pulse is detected. In cases where two or more types of ions have very similar mass-to-chargeratios, peaks can overlap.…”

Section: Peak Identificaion Of Mass Spectrum For Quantitative Apt Anamentioning

confidence: 99%

A Brief Comment on Atom Probe Tomography Applications

Seol

Kim

Park

2016

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Atom probe tomography is a time-of-flight mass spectrometry-based microanalysis technique based on the field evaporation of surface atoms of a tip-shaped specimen under an extremely high surface electric field. It enables three-dimensional characterization for deeper understanding of chemical nature in conductive materials at nanometer/ atomic level, because of its high depth and spatial resolutions and ppm-level sensitivity. Indeed, the technique has been widely used to investigate the elemental partitioning in the complex microstructures, the segregation of solute atoms to the boundaries, interfaces, and dislocations as well as following of the evolution of precipitation staring from the early stage of cluster formation to the final stage of the equilibrium precipitates. The current review article aims at giving a comment to first atom probe users regarding the limitation of the techniques, providing a brief perspective on how we correctly interprets atom probe data for targeted applications.

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Influence of multi-hit capability on quantitative measurement of NiPtSi thin film with laser-assisted atom probe tomography

Cited by 15 publications

References 14 publications

Effects of detector dead-time on quantitative analyses involving boron and multi-hit detection events in atom probe tomography

Effects of detector dead-time on quantitative analyses involving boron and multi-hit detection events in atom probe tomography

Reduction of multiple hits in atom probe tomography

A Brief Comment on Atom Probe Tomography Applications

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