A geometry-specific
analysis of exciton quenching in the quaterthiophene
(4T)-terminated alkanethiolate self-assembled monolayers (4TC
n
S-SAMs, where n is the number
of methylene units; n = 3, 5, 6, 7, 8, 9, and 13)
on Au(111) has been performed. In the previous studies we elucidated
the n-dependent lifetime (τ) of the photoexcited 4T group in SAMs. In this study, using X-ray
reflectivity (XRR) measurements, we evaluated the actual intralayer
thickness of 4TC
n
S-SAMs on Au(111) and
examined the quenching process as a function of distance (d) between the photoexcited moiety and the Au substrate.
We confirmed that τ precisely follows the power
law, i.e., τ ∝ d
α
, which is expected from the point
dipole model analysis of the excitation energy transfer (ET) processes.
Therefore, we attribute the dominant quenching mechanism to ET from
the exciton state of 4T to the Au substrate rather than the quantum
tunneling (QT) of excited electrons. However, the fitted parameter, α, is 4.28 ± 0.14 and thus deviates from the
theoretical value on bulk-dumping models and previously measured values
for admolecules on Au substrates, i.e., typically α ≈ 3. The origin of the deviation from the typical value is
quantitatively discussed.